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L99DZ80EP датащи(PDF) 17 Page - STMicroelectronics |
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L99DZ80EP датащи(HTML) 17 Page - STMicroelectronics |
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17 / 68 page ![]() DocID18260 Rev 6 17/68 L99DZ80EP Electrical specifications 67 2.6 Outputs OUT1 - OUT11, ECV, ECFD The voltages are referred to ground and currents are assumed positive, when the current flows into the pin. 6 V V S 18 V, 4.75 V VCC 5.5 V; all outputs open; Tj = -40 °C to 150 °C, unless otherwise specified. ICP Charge pump output current(1) VCP =VS +10V; VS =13.5V; C1 =C2 =CCP = 100 nF 25 47 mA ICPlim Charge pump output current limitation(2) VCP =VS; VS =13.5V; C1 =C2 =CCP = 100 nF 29 70 mA VCP_low Charge pump low threshold voltage VS +4.6 VS +5 VS +5.4 V TCP Charge pump low filter time 64 µs 1. ICP is the minimum current the device can provide to an external circuit without VCP going below VS +10V 2. ICPlim is the maximum current, which flows out of the device in case of a short to VS Table 11. Charge pump (continued) Symbol Parameter Test condition Min. Typ. Max. Unit Table 12. On-resistance Symbol Parameter Test condition Min. Typ. Max. Unit rON OUT1,6 On-resistance to supply or GND VS =13.5 V; Tamb =+25 °C; IOUT1,6 =±1.5 A 300 400 m VS =13.5 V; Tamb = +125 °C; IOUT1,6 =±1.5 A 450 600 m rON OUT2,3 On-resistance to supply or GND VS =13.5 V; Tamb =+25 °C; IOUT2,3 =±0.4 A 1600 2200 m VS =13.5 V; Tamb = +125 °C; IOUT2,3 =±0.4 A 2500 3400 m rON OUT4,5 On-resistance to supply or GND VS =13.5 V; Tamb =+25 °C; IOUT4,5 =±3.0 A 150 200 m VS =13.5 V; Tamb = +125 °C; IOUT4,5 =±3.0 A 225 300 m rON OUT7 On-resistance to supply in low resistance mode VS =13.5 V; Tamb =+25 °C; IOUT7 =-0.8 A 500 700 m VS =13.5 V; Tamb = +125 °C; IOUT7 =-0.8 A 700 950 m On-resistance to supply in high resistance mode VS =13.5 V; Tamb =+25 °C; IOUT7 =-0.2 A 1600 2400 m VS =13.5 V; Tamb = +125 °C; IOUT7 =-0.2 A 2500 3400 m |
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