L99DZ80EP datasheet(22/68 Pages) STMICROELECTRONICS

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Electrical specifications

L99DZ80EP

22/68

DocID18260 Rev 6

IGHxrmax

Maximum charge current

(current mode)

VS = 13.5 V; VSHx =0;

VGHx =1 V;

SLEW < 4:0

 1F

24.5

38.5

IGHxfmax

Maximum discharge current

(current mode)

VS = 13.5 V; VSHx =0;

VGHx =2 V;

SLEW < 4:0

 1F

18.5

dIIGHxr

Charge current accuracy

VS = 13.5 V; VSHx =0;

VGHx =1V

See Figure 6

dIIGHxf

Discharge current accuracy

VS = 13.5 V; VSHx =0;

VGHx =2 V

See Figure 7

VDSHxrSW

Switching Voltage (VS -VSH)

between current mode and

switch mode (rising)

VS = 13.5 V

1.5

VTDSHxf

(2)

Trigger Voltage to sample the

VGSH for switching between

switch mode and current

mode (falling)

VS = 13.5 V; VGHx =4V

1.5

VTGSHxacc

(2)

Sampled trigger voltage

accuracy

VS = 13.5 V; VSHx =0

t0GHxr

Rise time (switch mode)

VS = 13.5 V; VSHx =0;

RG =0 ; CG =2.7 nF

t0GHxf

Fall time (switch mode)

VS = 13.5 V; VSHx =0;

RG =0 ; CG =2.7 nF

t0GLxr

Rise time

VS = 13.5 V; VSLx =0;

RG =0 ; CG =2.7 nF

t0GLxf

Fall time

VS = 13.5 V; VSLx =0;

RG =0 ; CG =2.7 nF

tCCP

Programmable cross-current

protection time

0.1

µs

fPWMH

PWMH switching frequency(1)

VS = 13.5 V; VSLx =0;

RG =0 ; CG =2.7 nF;

PWMH - duty cycle = 50 %

kHz

Without cross-current protection time tCCP

Parameter not tested, typical value validated by characterization.

Table 16. Gate drivers for the external Power-MOS switching times

Symbol

Parameter

Test condition

Min. Typ. Max.

Unit

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