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L99MH98 датащи(PDF) 36 Page - STMicroelectronics |
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L99MH98 датащи(HTML) 36 Page - STMicroelectronics |
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36 / 147 page ![]() Figure 19. Full-bridge drain source monitoring diagnosis M VDH GH1 VDH SH1 GL1 VDH GH2 SH2 GL2 Gate Driver HS Gate Driver LS DS-Monitoring HS DS-Monitoring LS VSCd VSCd Gate Driver HS Gate Driver LS DS-Monitoring HS VSCd VSCd OL-Monitoring DS-Monitoring LS OL-Monitoring VSHx_OL GND VSHx_OL GND GND GND IPU IPU IPD IPD 5.4 Diagnostic in off-mode 5.4.1 Off-state diagnostic introduction The off-state diagnostic features (that is, the MOSFETs are off while the diagnostic is performed) offer several advantages: • Diagnostic checks can be performed for loads that are infrequently activated. • MOSFET short circuit conditions are detected without the stress inherent to on-state diagnostic mode. For example, the microcontroller can perform an off-state diagnostic right before the activation request of the load. Upon the fault condition, the application software can report the failure and inhibits the load activation, avoiding any stress to the MOSFETs. To perform the off-state diagnostic the following suggestions must be taken: • The half-bridge drivers must be in active mode: EN = High, OUTEx = 1, x = 1...8 • The corresponding MOSFETs are off: HB_MODEx = 00, x = 1...8 • The device is operating in normal mode: – VDH and VDD are in the normal operating range – No watchdog failure Note: It is highly recommended to restore the setting of VSCdx once the off-state diagnostic is performed for an appropriate MOSFET protection in on-state. The L99MH98 enables the detection of the following fault conditions while the MOSFETs are deactivated: • SHx is shorted to VDH • SHx is shorted to GND • Open load The Figure 20 shows the block diagram of the off-state diagnostic functionality integrated into the L99MH98. The following integrated components are used to perform the off-state diagnostic: • Pull-up diagnostic current (Ishx_PU) • Pull-down diagnostic current (Ishx_PD) L99MH98 Protections and diagnostics DS14611 - Rev 3 page 36/147 |
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