4

LP5562

SNVS820B – APRIL 2013 – REVISED DECEMBER 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150°C (typical) and

disengages at TJ = 130°C (typical).

(3)

For detailed soldering specifications and information, refer to Texas Instruments Application Note AN-1112 : DSBGA Wafer Level Chip

Scale Package.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

V (VDD, VEN/VCC, R, G, B, W)

−0.3

6

V

Voltage on pins

−0.3

VDD + 0.3 with 6 V maximum

V

Continuous power dissipation(2)

Internally limited

Junction temperature, TJ-MAX

125

°C

Maximum lead temperature (soldering)

See(3)

Storage temperature, Tstg

−65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±250

(1)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature

(TJ-MAX-OP = 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal

resistance of the part/package in the application (RθJA), as given by the equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

2.7

5.5

V

VEN/VCC

1.65

VDD

V

Junction temperature, TJ

−40

125

°C

Ambient temperature, TA

(1)

−40

85

°C

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

6.4 Thermal Information

THERMAL METRIC(1)

LP5562

UNIT

YQE (DSBGA)

12 PINS

RθJA

Junction-to-ambient thermal resistance

85.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

1.0

°C/W

RθJB

Junction-to-board thermal resistance

15.3

°C/W

ψJT

Junction-to-top characterization parameter

0.6

°C/W

ψJB

Junction-to-board characterization parameter

15.4

°C/W