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SC486 датащи(PDF) 17 Page - Semtech Corporation |
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SC486 датащи(HTML) 17 Page - Semtech Corporation |
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17 / 26 page ![]() 17 2006 Semtech Corp. www.semtech.com SC486 POWER MANAGEMENT Design Procedure (Cont.) Secondly calculating the value of C TOP required to achieve this: F f 2 R 1 Z 1 C ) MIN ( VBAT _ SW TOP TOP TOP • π • − = For our DDR2 VDDQ example we will use R TOP = 4.64kΩ and R BOT = 23.2kΩ, therefore V FB_VBAT(MIN) = 16.7mVP-P - good No additional capacitance is required, however a no-pop space is recommended to allow for adjustment once the design is complete, laid out and built. Next we need to calculate the minimum output capacitance required to ensure that the output voltage does not exceed the transient maximum limit, POSLIM TR, starting from the actual static maximum, V OUT_ST_POS, when a load release occurs: V ERR V V DC OUT POS _ ST _ OUT + = For our DDR2 VDDQ example: V OUT_ST_POS = 1.836V V TOL V POSLIM TR OUT TR • = Where TOL TR is the transient tolerance. For our DDR2 VDDQ example: POSLIM TR = 1.900V The minimum output capacitance is calculated as follows: ()F V POSLIM 2 I I L C 2 POS _ ST _ OUT 2 TR 2 ) MAX ( VBAT _ RIPPLE OUT ) MIN ( OUT − + • = This calculation assumes the absolute worst case condition of a full-load to no load step transient occurring when the inductor current is at its highest. The capacitance required for smaller transient steps my be calculated by substituting the desired current for the I OUT term. For our DDR2 VDDQ example: C OUT(MIN) = 839µF. We will select 440µF, using two 220µF, 15m Ω capacitors in parallel, which will be good for load release steps of up to 6.7A. Next we calculate the RMS input ripple current, which is largest at the minimum battery voltage: () RMS MIN _ BAT OUT OUT ) MIN ( BAT OUT ) RMS ( IN A V I V V V I • − • = For our DDR2 VDDQ example: I IN(RMS) = 4ARMS Input capacitors should be selected with sufficient ripple current rating for this RMS current, for example a 10µF, 1210 size, 25V ceramic capacitor can handle approximately 3A RMS. Refer to manufacturer’s data sheets. Finally, we calculate the current limit resistor value. As described in the current limit section, the current limit looks at the “valley current”, which is the average output current minus half the ripple current. We use the maximum room temperature specification for MOSFET R DS(ON) at VGS = 4.5V for purposes of this calculation: A 2 I I I ) MIN ( VBAT _ RIPPLE OUT VALLEY − = The ripple at low battery voltage is used because we want to make sure that current limit does not occur under normal operating conditions. () Ohms 10 10 4 . 1 R 2 . 1 I R 6 ) ON ( DS VALLEY ILIM − • • • • = For our DDR2 VDDQ example R DS(ON) = 9mΩ: I VALLEY = 8.69A and RILIM = 13.1kΩ We select the next lowest 1% resistor value: 13.0k Ω |
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