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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FS6500 датащи(PDF) 21 Page - NXP Semiconductors |
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FS6500 датащи(HTML) 21 Page - NXP Semiconductors |
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21 / 153 page  NXP Semiconductors FS6500-FS4500-ASILD Safety power system basis chip with CAN FD and LIN transceivers TA = –40 °C to 125 °C, unless otherwise specified. VSUP = VSUP_UV_L to 36 V, unless otherwise specified. All voltages referenced to ground. When 28 V < VSUP < 36 V, thermal dissipation must be considered (see Figure 32). Symbol Parameter Min. Typ. Max. Unit Notes VCANLP CANL, CANH output voltage in sleep modes. No termination load. –0.1 0.0 0.1 V ICAN CANH, CANL input current, device unsupplied, (VCANH, VCANL = 5.0 V) • VSUP and VCAN connected to GND • VSUP and VCAN connected to GND via 47 kΩ resistor –10 –10 — — 10 10 µA µA [10] TOT Overtemperature detection 160 — — °C THYST Overtemperature hysteresis — — 20 °C LIN transceiver (when 7.0 V < VSUP1,2,3 < 18 V, unless otherwise specified) LIN logic input pin (TXDL) VTXDL_IH TXDL high input threshold 2.0 — — V VTXDL_IL TXDL low input threshold — — 0.8 V TXDLPULL-UP TXDL internal pull-up (to VDDIO) 20 33 50 kΩ TXDLLK TXD input leakage current, VTXDL = VDDIO –1.0 — 1.0 µA LIN logic input pin (RXDL) VRXDL_OL1 Low level output voltage (IRXDL = 250 µA) — — 0.4 V VRXDL_OL2 Low level output voltage (IRXDL = 1.5 mA) — — 0.9 V VRXDL_OUT_HIGH High level output voltage (IRXDL = –250 µA, VDDIO = 3.0 V to 5.5 V) VDDIO – 0.4 — — V LIN output pin IBUS_PAS_DOM Input leakage current at the receiver. dominant state (Driver OFF, VBAT = 12 V, VBUS = 0 V) –1.0 — — mA [11] IBUS_PAS_REC Input leakage current at the receiver. recessive state (Driver OFF, 8.0 V < VBAT < 18 V, 8.0 V < VBUS < 18 V, VBUS ≥ VBAT) — — 20 µA VDRIVER_DOM Driver dominant voltage — — 0.251 × VSUP V VBUS_DOM Receiver dominant state — — 0.4 × VSUP V VBUS_REC Receiver recessive state 0.6 × VSUP — — V VBUS_WU LIN wake-up detection threshold (7.0 V < VSUP < 18 V) 0.4 × VSUP — 0.6 × VSUP V VLIN_UV VSUP undervoltage threshold — — 7.0 V VSER_DIODE Series diode voltage drop (DSER_COMMANDER and DSER_INT in pull-up path) 0.4 0.7 1.0 V IBUS_LIM Current limitation for driver dominant state (VBUS = 18 V) 40 — 200 mA [12] RRESPONDER LIN pull-up resistor 20 — 60 kΩ VSHIFT_GND Ground shift (VSHIFT_GND = VGND_ECU – VGND_BATTERY) 0.0 — 11.5 % VBAT V VSHIFT_BAT Battery voltage shift (VSHIFT_BAT = VBATTERY – VSHIFT_GND– VBAT) 0.0 — 11.5 % VBAT V [13] VSHIFT_DIF Difference between battery shift and ground shift (VSHIFT_DIF = VSHIFT_BAT – VSHIFT_GND) 0.0 — 8.0 % VBAT V [14] VBUS_CNT VBUS_CNT = (VTH_REC + VTH_DOM)/2 0.475 × VSUP — 0.525 × VSUP V [15] Table 5. Static electrical characteristics ...continued FS6500-FS4500-ASILD All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 8 — 5 August 2024 Document feedback 21 / 153 |
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