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CYPAS213 датащи(PDF) 19 Page - Infineon Technologies AG

номер детали CYPAS213
подробное описание детали  EZ-PD™ PAG2S-PS integrated USB PD and synchronous-rectification controller
PDF  34 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

CYPAS213 датащи(HTML) 19 Page - Infineon Technologies AG

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Datasheet
19
002-37178 Rev. *B
2023-10-10
EZ-PD™ PAG2S-PS integrated USB PD and
synchronous-rectification controller
Electrical specifications
TR_SR1
Rise time
(1 V to VOH – 1 V) of
sync-rectifier gate
driver output with
CL = 3 nF, including
(with doubler mode)
––
75
ns
TR_SR2
Rise time
(1 V to VOH – 1 V) of
sync-rectifier gate
driver output with
CL = 3 nF, including
(with doubler bypass
mode)
––
30
ns
GPIO
I_LU
Latch up current limits –100
100
mA
RPU
Pull-up resistor value
3.5
5.6
8.5
kΩ
RPD
Pull-down resistor
value
IIL
Input leakage current
(Absolute value)
2
nA
+25°C TA, 3 V VDDD
CPIN_A
Max pin capacitance
22
pF
Capacitance on DP, DM
pins
CPIN
Max pin capacitance
3
7
All VDDD,
all other GPIOs
Voh
Output voltage high
level
VDDD – 0.6
V
Ioh = -4 mA
Vol
Output voltage low
level
0.6
Iol = 10 mA
Vih_CMOS
Input voltage high
threshold
0.7 × VDDD
Vil_CMOS
Input voltage low
threshold
–0.3 × VDDD
Vih_TTL
LVTTL input
2
Vil_TTL
LVTTL input
0.8
Vhysttl
Input hysteresis LVTTL 80
–mV
Vhyscmos
Input hysteresis CMOS 0.1 × VDDD
IDIODE
Current through
protection diode to
VDDD/VSS
100
µA
TriseF
Rise time in Fast
Strong mode
1
15
ns
Cload = 25 pF
TfallF
Fall time in Fast Strong
mode
15
TriseS
Rise time in Slow
Strong mode
10
70
TfallS
Fall time in Slow
Strong mode
Table 6
Functional block specifications (continued)
Parameter
Description
Min
Typ
Max
Unit
Details/conditions



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