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CYPAS213 датащи(PDF) 23 Page - Infineon Technologies AG

номер детали CYPAS213
подробное описание детали  EZ-PD™ PAG2S-PS integrated USB PD and synchronous-rectification controller
PDF  34 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

CYPAS213 датащи(HTML) 23 Page - Infineon Technologies AG

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Datasheet
23
002-37178 Rev. *B
2023-10-10
EZ-PD™ PAG2S-PS integrated USB PD and
synchronous-rectification controller
Electrical specifications
LS-CSA AC specifications
Tscp_gate
Delay from SCP
threshold trip to
external NFET power
gate turn off
2.5
–µs
1nF NFET gate
capacitance,
VBUS_IN = 28 V
Tscp_gate_1
7.5
3nF NFET gate
capacitance,
VBUS_IN = 28 V
UVOV
VTHOV
Over-voltage
threshold accuracy,
4 V to 30 V
–3
3
%–
VTHUV1
Under-voltage
threshold accuracy,
3 V to 4 V
–4
4
VTHUV2
Under-voltage
threshold accuracy,
4 V to 30 V
–3
3
VBUS gate driver DC specs
GD_VGS
Gate to source
overdrive during ON
condition
5
10
V
NFET driver is ON
GD_Rpd
Resistance when
pull-down enabled
–2
Applicable on
VBUS_CTRL to turn-off
external NFET
GD_drv
Programmable typical
gate current
0.3
9.75
µA
Gate driver output
current
VBUS gate driver AC specs
Ton
VBUS_ctrl Low to High
(1 V to VBUS + 1 V) with
3 nF external
capacitance
2
5
10
ms
VBUS_in = 5 V
Toff
VBUS_ctrl High to Low
(90% to 10%) with 3 nF
external capacitance
7.5
µs
VBUS_in = 28 V
VBUS discharge
R1
NMOS ON resistance
for DS = 1 on VBUS_IN 1000
4000
Measured at 0.5 V
R2
NMOS ON resistance
for DS = 2 on VBUS_IN 500
2000
R4
NMOS ON resistance
for DS = 4 on VBUS_IN 250
1000
R8
NMOS ON resistance
for DS = 8 on VBUS_IN 125
500
R16
NMOS ON resistance
for DS = 16 on VBUS_IN 62.5
250
R32
NMOS ON resistance
for DS = 32 on VBUS_IN 31.25
150
Table 6
Functional block specifications (continued)
Parameter
Description
Min
Typ
Max
Unit
Details/conditions



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