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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MP2733 датащи(PDF) 7 Page - MPS Industries, Inc. |
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MP2733 датащи(HTML) 7 Page - MPS Industries, Inc. |
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7 / 51 page  MP2733 – 4.5A SW CHARGER WITH I2C CONTROL, NVDC POWER PATH, USB OTG MP2733 Rev. 1.1 www.MonolithicPower.com 7 5/18/2023 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2023 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VIN = 5V, TA = 25°C, unless otherwise noted. Parameter Symbol Condition Min Typ Max Units Step-Down Converter Input voltage VIN 3.7 16 V Input suspend current IIN_SUS VIN > VIN_UVLO, VIN > VBATT, suspend mode, EN_HIZ = 1 1 1.5 mA Input quiescent current IIN_Q VIN > VIN_UVLO, VIN > VBATT, VBATT = 3.6V, converter switching, ISYS = 0A 4 Input under-voltage lockout (UVLO) threshold VIN_UVLO VIN falling 3 3.2 V Input UVLO threshold hysteresis VIN rising 200 mV Input vs. battery voltage headroom VHDRM VIN rising 230 300 370 mV VIN falling 120 190 260 mV Input over-voltage protection (OVP) threshold VIN_OVLO VIN rising 5.8 6 6.3 V VIN rising, for VIN > 5V 16.2 16.7 17.2 Input OVP threshold hysteresis VIN falling 380 mV Internal reverse blocking MOSFET on resistance RON_Q1 Measure from IN to PMID 20 mΩ High-side MOSFET (HS- FET) on resistance RON_Q2 Measure from PMID to SW 25 mΩ Low-side MOSFET (LS- FET) on resistance RON_Q3 Measure from SW to PGND 25 mΩ Switching frequency fSW VBATT = 3.7V, ICHG = 2A, REG0Ah, bit[7] = 0 1.1 1.35 1.6 MHz SYS Output Minimum system regulation voltage (I2C) VSYS_REG_MIN VSYS_MIN + VTRACK, ISYS = 0, VBATT = 3.4V, REG04h, bits[3:1] = 110, REG04h, bit[0] = 1 3.82 V Battery tracking voltage VTRACK REG04h, bit[0] = 0 100 mV REG04h, bit[0] = 1 150 mV Ideal diode forward voltage in supplement mode VFWD 10mA discharge current 20 mV SYS vs. BATT comparator VSYS_GT_BATT VSYS falling to enter ideal diode mode -20 mV SYS vs. BATT comparator hysteresis VSYS rising to exit ideal diode mode 50 mV Battery good comparator (threshold compared with VSYS_MIN) VBATT_GD VBATT rising to the BATTFET being fully turned on 60 mV Battery good comparator hysteresis VBATT falling 100 mV |
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