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JS28F320J3F75 датащи(PDF) 23 Page - Numonyx B.V |
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JS28F320J3F75 датащи(HTML) 23 Page - Numonyx B.V |
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23 / 67 page ![]() Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) Datasheet 22 6.2 DC Voltage specifications 6.3 Capacitance Notes: 1. Sampled, not 100% tested. 2. TA = -40 °C to +85 °C, VCC= VCCQ= 0 to 3.6 V. Table 8: DC Voltage Characteristics VCCQ 2.7 - 3.6 V Test Conditions Notes VCC 2.7 - 3.6 V Symbol Parameter Min Max Unit VIL Input Low Voltage –0.5 0.8 V — 2, 5, 6 VIH Input High Voltage 2.0 VCCQ + 0.5 V — 2, 5, 6 VOL Output Low Voltage —0.4 V VCC = VCCMin VCCQ = VCCQ Min IOL = 2 mA 1, 2 —0.2 V VCC = VCCMin VCCQ = VCCQ Min IOL = 100 µA VOH Output High Voltage 0.85 × VCCQ —V VCC = VCCMIN VCCQ = VCCQ Min IOH = –2.5 mA 1, 2 VCCQ – 0.2 — V VCC = VCCMIN VCCQ = VCCQ Min IOH = –100 µA VPENLK VPEN Lockout during Program, Erase and Lock-Bit Operations —2.2 V — 2, 3 VPENH VPEN during Block Erase, Program, or Lock-Bit Operations 2.7 3.6 V — 3 VLKO VCC Lockout Voltage — 2.0 V — 4 Notes: 1. Includes STS. 2. Sampled, not 100% tested. 3. Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not guaranteed in the range between VPENLK (max) and VPENH (min), and above VPENH (max). 4. Block erases, programming, and lock-bit configurations are inhibited when VCC ≤ VLKO, and not guaranteed in the range between VLKO and VCC (min), and above VCC (max). 5. Includes all operational modes of the device. 6. Input/Output signals can undershoot to -1.0V referenced to VSS and can overshoot to VCCQ + 1.0V for duration of 2ns or less, the VCCQ valid range is referenced to VSS. Table 9: Capacitance Symbol Parameter1 Type Max Unit Condition2 CIN Input Capacitance 67 pF VIN = 0.0 V COUT Output Capacitance 45 pF VOUT = 0.0 V |
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