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JS28F320J3F75 датащи(PDF) 7 Page - Numonyx B.V |
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JS28F320J3F75 датащи(HTML) 7 Page - Numonyx B.V |
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7 / 67 page ![]() Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) Datasheet 6 1.0 Introduction This document contains information pertaining to the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications. Unless otherwise indicated throughout the rest of this document, the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as J3 65 nm SBC. The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices. 1.1 Nomenclature J3 65 nm SBC Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) AMIN All Densities AMIN = A0 for x8 All Densities AMIN = A1 for x16 AMAX 32 Mbit AMAX = A21 64 Mbit AMAX = A22 128 Mbit AMAX = A23 Block A group of flash cells that share common erase circuitry and erase simultaneously. Clear Indicates a logic zero (0) Program Writes data to the flash array Set Indicates a logic one (1) VPEN Refers to a signal or package connection name VPEN Refers to timing or voltage levels |
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