5

STAND-BY mode feature

5.1

STAND-BY behavior in detail

In the next paragraphs all device features in STAND-BY mode are presented in detail, putting in evidence the

functional differences from normal operation mode, and describing the way to enter (exit) to (from) it.

5.1.1

STAND-BY mode feature description

STPM801 can enter in a hybrid configuration to reduce current consumption, disabling some diagnostics, and

reducing safety and accuracy of some features. Basically, the device keeps the hotswap and oring functionality,

with ideal diode regulation provided with a lower accuracy, and without fast pullup feature. Current consumption

values in standby are shown in Table 20.

In standby mode all diagnostics are disabled, to save current consumption, except CP_UV and OVC feature, that

are kept ON avoiding damage of external MOSFETs. OVC keeps the HV comparator with half threshold in typical

condition, and STG comparator switches off hotswap and Oring, with a specified filter time (see Figure 12).

The device always starts in normal mode after it powers up; the standby condition can be reached by applying a

dedicated pattern on STBY_IN pin. Once in standby mode, the IC can be brought back in normal mode by a rising

pulse of STBY_IN lasting 1 ms at least. Device status either.

Normal or stand-by is echoed on the pin STBY_ECHO.

Standby mode access is denied when the device is in fault condition.

DIS pin is ignored in stand-by. Vice versa, if DIS pin is High during normal state, the stand-by pattern is ignored. If

DIS pin is High in stand-by, the device can return to normal state, and, after the filter time of DIS pin expired, the

drivers are turned off.

VB operative range in stand-by is between 4.5 V and 28 V: operation outside this specific range can lead to

degraded performances; the IC integrity is by the way granted up to the specified AMR.

Table 20. Supply current in standby mode

Symbol

Parameter

Test condition

Min Typ Max Unit

ION_STAND-BY

Supply current in standby

mode

VB = 14 V, device enable VOUT = VSENSE =

VSOURCE, HGATE ON, DGATE regulation

5

-

9

mA

5.1.2

Oring driver in STAND-BY

The pre-driver for oring MOSFET is an ideal diode regulator. VDS detection is not present in standby mode.

Neither the fast turn on comparator nor the related fast pull-up are present in standby mode. The other

parameters related to oring driver have no change in standby mode.

5.1.3

Hot swap driver in STAND-BY

The pre-driver for hot swap MOSFET, in standby mode, has the same pull-up current (during turn-on) and

pull-down current (at the switch off), as in normal mode. VDS diagnostics are disabled in stand-by. The other

parameters are aligned with the specification in normal state, with the only exception reported in Table 21. Since

the charge pump regulation, in standby mode, is lower, the minimum VGS guaranteed for the hot swap is also

lower.

Table 21. Hot swap driver in standby

Symbol

Parameter

Test condition

Min Typ Max Unit

ΔVHG1_12V_STAND-BY

HGATE gate Drive_STAND-BY,

(VHGATE - VSOURCE)

Drive voltage at VB = 14 V, CP = VB + 15,

VB + 9

8

-

11

V

STPM801

STAND-BY mode feature

DS13990 - Rev 2

page 23/38