The VDS comparator of oring is also masked until the full on condition (OUT > VB - VFULL_ON) is reached.

Every time the oring pre-driver is turned ON, the VDS comparator is masked until a

Oring_VDS_mask_soft_start_flt is expired (and the other masking conditions disappear).

Table 16. Oring pre-driver parameters

Symbol

Parameter

Test condition

Min Typ Max Unit

Oring_ΔVDG2_4V

DGATE gate drive, (VDGATE

- VSOURCE)

Drive voltage at VB = 4.5 V CP =

VB + 5.3, VB + 6

4.5

-

-

V

Oring_ΔVDG2_12V

DGATE gate drive, (VDGATE

- VSOURCE)

Drive voltage at VB = 14 V, CP = VB

+ 11, VB + 9

6

-

8

V

Oring_VDG_12V

DGATE gate driver, upper

limit respect charge pump

value

Drive voltage at VB = 14 V, CP = VB

+ 11 V, guaranteed by design

-

-

CP-1

V

Oring_IDGATE(UP)

DGATE oring pull-up Current,

peak

Peak current guaranteed by design,

switch on time < 2 μs, 15 nF from 0

V to 4.5 V at VB 14 V

55

-

180

mA

Oring_IDGATE(UP)_VBmin

DGATE oring pull-up Current,

peak at VB min

Peak current guaranteed by design,

switch on time < 3 μs, 15 nF from 0

V to 4.5 V at VB 4.5 V

45

-

130

mA

Oring_IDGATE(DN)

DGATE oring pull-down

Current, peak

Peak current guaranteed by design,

switch off time < 1.5 μs, 15 nF from

regulated to 1.5 V

100

-

300

mA

Oring_IDGATE(DN)_VBmin

DGATE oring pull-down

Current, peak

Peak current guaranteed by design,

switch off time < 1.5 μs, 15 nF from

regulated to 1.5 V

90

-

250

mA

Oring_VREG

Ideal diode regulation voltage,

(VSOURCE - VSENSE)

-

15

30

47

mV

Oring_Fullon

(VSOURCE - VSENSE) for

fast turn ON activation

-

60

80

130

mV

Oring_VREV

Reverse voltage shut off

(VSOURCE - VSENSE)

-

-20 -10

-4

mV

Oring_Turnoff_delay

DGATE turn-off propagation

delay

Guaranteed by design

-

-

0.6

us

Oring_VDS

VDS on oring MOS.generates

FLT if detection happens

-

270 300 330

mV

Oring_VDS_flt

Short detection filter time

Guaranteed by scan

0.8 0.9

1

ms

Oring_VDS_mask_soft_start_flt Soft Start blanking time

Guaranteed by scan

80

90

100

ms

Source_Rev_Leakage

Source input leakage

VB floating < OUT = SENSE = 14 V,

Force SOURCE pin 5 V measure

sinked current

-

-

4

mA

4.1.10

DISABLE

When DIS pin is driven at high logic level, the device turns off HGATE and DGATE with internal pulldown.

Differently from WAKE, DIS assertion turns off the pre-drivers only, but the device remains supplied. When DIS

pin is driven at low logic level, the device turns on HGATE and DGATE with internal pullup.

For internal pulldown and pullup specification, refer to Section 4.1.9 Oring pre-driver.

Table 17. DISABLE parameters

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

DIS_in_hl_th

High input voltage range

-

2

-

-

V

STPM801

Functional behavior in detail

DS13990 - Rev 2

page 19/38