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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ADA4097-1BUJZ-R5 датащи(PDF) 5 Page - Analog Devices |
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ADA4097-1BUJZ-R5 датащи(HTML) 5 Page - Analog Devices |
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5 / 31 page  Data Sheet ADA4097-1/ADA4097-2 SPECIFICATIONS analog.com Rev. A | 5 of 31 Table 1. Parameter Test Conditions/Comments B Grade H Grade Unit Min Typ Max Min Typ Max Amplifier shutdown,VSHDN = −VS + 1.5 V 12 20 12 20 µA TMIN < TA < TMAX 22.5 22.5 µA PSRR VSY = +3 V to ±25 V 123 145 123 145 dB TMIN < TA < TMAX 120 120 dB THERMAL SHUTDOWN6 Temperature TJ 175 175 °C Hysteresis 20 20 °C Operating Temperature TA −40 +125 −55 +150 °C 1 Thermoelectric voltages present in the high speed production test limit the measurement accuracy of this parameter. The limits shown in Table 1 are determined by test capability and are not necessarily indicative of actual device performance. 2 Offset voltage drift is guaranteed through lab characterization and is not production tested. 3 Test accuracy is limited by high speed production test equipment repeatability. Bench measurements indicate that the input offset current in Over-The-Top configuration is typically controlled to under 50 nA at +25°C and 100 nA over the −55°C < TA < +150°C temperature range. 4 VOD is +30 mV for VOUT high and −30 mV for VOUT low. 5 Maximum operating voltage is limited by the time-dependent dielectric breakdown (TDDB) of the on-chip capacitor oxides. The amplifier tolerates temporary transient overshoot up to the specified absolute maximum rating, but the dc supply voltage must be limited to the maximum operating voltage. 6 Thermal shutdown is lab characterized only and is not tested in production. ±15 V SUPPLY VCM = 0 V, SHDN pin (ADA4097-1) and SHDNx pins (ADA4097-2 for the 10-lead LFCSP only) are open, RLOAD = 499 kΩ to ground, and TA = 25°C, unless otherwise noted. Table 2. Parameter Test Conditions/Comments B Grade H Grade Unit Min Typ Max Min Typ Max DC PERFORMANCE VOS1 ±20 ±60 ±20 ±60 µV TMIN < TA < TMAX ±150 ±175 µV VSY = ±25 V ±20 ±60 ±20 ±60 µV TMIN < TA < TMAX ±150 ±175 µV Input Offset Voltage Drift2 TMIN < TA < TMAX ±0.1 ±1 ±0.1 ±1.5 µV/°C Input Bias Current (IB) ±0.1 ±0.3 ±0.1 ±0.3 nA TMIN < TA < TMAX ±10 ±25 nA VSY = ±25 V ±0.1 ±0.3 ±0.1 ±0.3 nA TMIN < TA < TMAX ±10 ±25 nA IOS ±0.1 ±0.3 ±0.1 ±0.3 nA TMIN < TA < TMAX ±5 ±10 nA VSY = ±25 V ±0.1 ±0.3 ±0.1 ±0.3 nA TMIN < TA < TMAX ±5 ±10 nA CMRR VCM = −14.75 V to +13.25 V 117 135 117 135 dB TMIN < TA < TMAX 109 109 dB VCM = −15.1 V to +13.25 V 117 135 117 135 dB TMIN < TA < TMAX 93 92 dB VCM = −15.1 V to +55 V 117 140 117 140 dB TMIN < TA < TMAX 101 100 dB |
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