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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SPC58NH84C5 датащи(PDF) 41 Page - STMicroelectronics |
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SPC58NH84C5 датащи(HTML) 41 Page - STMicroelectronics |
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41 / 147 page  DS12304 Rev 5 41/147 SPC58EHx, SPC58NHx Electrical characteristics 43 In order to ensure device functionality, the sum of the dynamic and static current of the I/O on a single segment should remain below the IDYNSEG maximum value. Pad mapping on each segment can be optimized using the pad usage information provided on the I/O Signal Description table. Table 17. I/O consumption Symbol C Parameter Conditions Value(1) Unit Min Typ Max Average consumption(2) IRMSSEG SR D Sum of all the DC I/O current within a supply segment —— — 80 mA IRMS_W CC D RMS I/O current for WEAK configuration CL = 25 pF, 2 MHz, VDD =5.0 V ± 10 % —— 1.1 mA CL = 50 pF, 1 MHz, VDD =5.0 V ± 10 % —— 1.1 CL = 25 pF, 2 MHz, VDD =3.3 V ± 10 % —— 1.0 CL = 25 pF, 1 MHz, VDD = 3.3 V ± 10% —— 1.0 IRMS_M CC D RMS I/O current for MEDIUM configuration CL = 25 pF, 12 MHz, VDD = 5.0 V ± 10% —— 5.5 mA CL = 50 pF, 6 MHz, VDD = 5.0 V ± 10% —— 5.5 CL = 25 pF, 12 MHz, VDD = 3.3 V ± 10% —— 4.2 CL = 25 pF, 6 MHz, VDD = 3.3 V ± 10% —— 4.2 IRMS_S CC D RMS I/O current for STRONG configuration CL = 25 pF, 50 MHz, VDD = 5.0 V ± 10% —— 21 mA CL = 50 pF, 25 MHz, VDD = 5.0 V ± 10% —— 21 CL = 25 pF, 25 MHz, VDD = 3.3 V ± 10% —— 10 CL = 25 pF, 12.5 MHz, VDD = 3.3 V ± 10% —— 10 IRMS_V CC D RMS I/O current for VERY STRONG configuration CL = 25 pF, 50 MHz, VDD = 5.0 V ± 10% —— 23 mA CL = 50 pF, 25 MHz, VDD = 5.0 V ± 10% —— 23 CL = 25 pF, 50 MHz, VDD = 3.3 V ± 10% —— 16 CL = 25 pF, 25 MHz, VDD = 3.3 V ± 10% —— 16 |
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