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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SPC58NH84C5 датащи(PDF) 33 Page - STMicroelectronics |
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SPC58NH84C5 датащи(HTML) 33 Page - STMicroelectronics |
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33 / 147 page  DS12304 Rev 5 33/147 SPC58EHx, SPC58NHx Electrical characteristics 43 ILKG CC P Pad input leakage VERY STRONG pads, TJ =150 °C — — 1,000 nA ILKG CC P Pad input leakage ULTRA STRONG pads, TJ = 150 °C — — 1,000 nA CP1 CC D Pad capacitance —— — 10 pF Vdrift CC D Input Vil/Vih temperature drift In a 1 ms period, with a temperature variation <30 °C —— 100 mV WFI SR C Wakeup input filtered pulse(1) —— — 20 ns WNFI SR C Wakeup input not filtered pulse(1) — 400 — — ns 1. In the range from WFI (max) to WNFI (min), pulses can be filtered or not filtered, according to operating temperature and voltage. Refer to the device pinout IO definition excel file for the list of pins supporting the wakeup filter feature. Table 10. I/O input electrical characteristics (continued) Symbol C Parameter Conditions Value Unit Min Typ Max Table 11. I/O pull-up/pull-down electrical characteristics Symbol C Parameter Conditions Value Unit Min Typ Max IWPU CC T Weak pull-up current absolute value VIN = 1.1 V(1) —— 130 μA P VIN = 0.69 * VDD_HV_IO(2) 15 — — RWPU CC D Weak Pull-up resistance VDD_HV_IO = 5.0 V ± 10% 33 — 93 K Ω RWPU CC D Weak Pull-up resistance VDD_HV_IO = 3.3 V ± 10% 19 — 62 K Ω IWPD CC T Weak pull- down current absolute value VIN = 0.69 * VDD_HV_IO(1) —— 130 μA P VIN = 0.9 V(2) 15 — — RWPD CC D Weak Pull- down resistance VDD_HV_IO = 5.0 V ± 10% 29 — 60 K Ω RWPD CC D Weak Pull- down resistance VDD_HV_IO = 3.3 V ± 10% 19 — 60 K Ω 1. Maximum current when forcing a change in the pin level opposite to the pull configuration. 2. Minimum current when keeping the same pin level state than the pull configuration. |
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