SPC58NH84C5 datasheet(76/147 Pages) STMICROELECTRONICS

76 / 147 page

Electrical characteristics

SPC58EHx, SPC58NHx

76/147

DS12304 Rev 5

Table 38. Flash memory program and erase specifications

Symbol

Characteristics(1)(2)

Value

Unit

Typ(3) C

Initial max

Typical

end of

life(4)

Lifetime

max(5)

25 °C

(6)

All

temp

(7)

< 1 K

cycles

< 250 K

cycles

tdwprogram

Double Word (64 bits)

program time (Partition 0, 2 &

130

—

140

650

µs

tpprogram

Page (256 bits) program time

240

—

255

1000

µs

tpprogrameep

Page (256 bits) program time

(partition 0, 2 & 3)

300

—

315

1300

µs

tqprogram

Quad Page (1024 bits)

program time

220

840

1200

850

2000

µs

tqprogrameep

Quad Page (1024 bits)

program time (partition 0, 2 &

306

1200

1800

1270

2600

µs

t16kpperase

16 KB block pre-program and

erase time

190

450

500

250

1000

—

C ms

t32kpperase

32 KB block pre-program and

erase time

250

520

600

310

1200

—

C ms

t64kpperase

64 KB - Partition 0 32 KB

block pre-program and erase

time

360

700

750

420

1600

—

C ms

t128kpperase

128 KB - Partition 0 64 KB -

Partition 0 96 KB block pre-

program and erase time

600

1300

1600

800

4000

—

C ms

t256kpperase

256 KB block pre-program

and erase time

1050 C

1800

2400

1600

4000

—

C ms

t16kprogram

16 KB block program time

1000

—

C ms

t32kprogram

32 KB block program time

100

1200

—

C ms

t64kprogram

64 KB - Partition 0 32 KB

block program time

102

175

200

150

1600

—

C ms

t128kprogram

128 KB - Partition 0 64 KB -

Partition 0 96 KB block

program time

205

350

430

300

2000

—

C ms

t256kprogram 256 KB block program time

410

700

850

590

4000

—

C ms

t64kprogrameep

Program 64 KB Data Flash -

EEPROM (partition 2)

120

200

300

330

2275

C ms

t64keraseeep

Erase 64 KB Data Flash -

EEPROM (partition 2)

530

910

1150

1040

4700

C ms

t16kprogrameep

Program 16 KB Data Flash -

EEPROM (partition 3)

2275

C ms

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