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SPC572L64F2 датащи(PDF) 69 Page - STMicroelectronics

номер детали SPC572L64F2
подробное описание детали  32-bit Power Architecture® based MCU for automotive powertrain applications
PDF  112 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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SPC572L64F2 датащи(HTML) 69 Page - STMicroelectronics

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SPC572Lx
Electrical characteristics
111
2. Actual hardware programming times; this does not include software overhead.
3. Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change
pending device characterization.
4. Typical End of Life program and erase times represent the median performance and assume nominal supply values.
Typical End of Life program and erase values may be used for throughput calculations. These values are characteristic, but
not tested.
5. Lifetime maximum program & erase times apply across the voltages and temperatures and occur after the specified
number of program/erase cycles. These maximum values are characterized but not tested or guaranteed.
6. Initial factory condition: < 100 program/erase cycles, 20 °C < TJ < 30 °C junction temperature, and nominal (± 2%) supply
voltages. These values are verified at production testing.
7. Initial maximum “All temp” program and erase times provide guidance for time-out limits used in the factory and apply for
less than or equal to 100 program or erase cycles, –40 °C < TJ < 150 °C junction temperature, and nominal (± 2%) supply
voltages. These values are verified at production testing.
8. Rate computed based on 256K sectors.
9. Only code sectors, not including EEPROM.
10. Time between erase suspend resume and next erase suspend.
11. Timings guaranteed by design.
12. AIC is done using system clock, thus all timing is dependant on system frequency and number of wait states. Timing in the
table is calculated at 160 MHz.
Table 37. Flash memory module extended life specification(1)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
P/E16
CC
C Number of
program/erase cycles
per block for 16 KB
EEPROM emulation (2)
—
100,000
—
—
P/E
cycles
P/E256
CC
C Number of
program/erase cycles
per block for 256 KB
blocks(2)
—
1000
100,000
—
P/E
cycles
Data retention CC
C Minimum data retention Blocks with 0 – 10000
P/E cycles
20
—
—
years
Blocks with 10001–
250000 P/E cycles.
Data Retention limited
to 2, in total, 16 KB
sectors within module 1
10
—
—
1. All stated module life data are preliminary targets, and subject to change pending silicon characterization.
2. Program and Erase supported for standard operating temperature range.



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