STM32WL55JC datasheet(100/147 Pages) STMICROELECTRONICS

100 / 147 page

Electrical characteristics

STM32WL55/54xx

100/147

DS13293 Rev 2

For more information about the trimming methodology of the oscillator, refer to the

application note HSE trimming for STM32 wireless MCUs (AN5042).

For more information about the crystal selection, refer to the application note Oscillator

design guide for STM8AF/AL/S, STM32 MCUs and MPUs (AN2867).

TCXO regulator

Load capacitance can be managed by internal programmable capacitances at calibration phase. No need to add external

foot capacitances. The values indicated take into account the combination of the two foot capacitances.

Table 60. HSE32 oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tSUA(HSE)

Startup time for 80% amplitude

stabilization

VDDRF stabilized,

SUBGHZ_HSEINTRIMR = 0x12,

-40 to +105 °C temperature range

-1000-

µs

tSUR(HSE)

Startup time

for HSEREADY signal

VDDRF stabilized,

SUBGHZ_HSEINTRIMR = 0x12,

-40 to +105 °C temperature range

180

IDDRF(HSE) HSE32 current consumption

HSEGMC = 000,

SUBGHZ_HSEINTRIMR = 0x12

-50

µA

XOTg(HSE)

SUBGHZ_HSEINTRIMR

granularity

Capacitor bank

-1

ppm

XOTfp(HSE)

SUBGHZ_HSEINTRIMR

frequency pulling

±15

±30

XOTnb(HSE)

SUBGHZ_HSEINTRIMR

number of tuning bits

-6-

bit

XOTst(HSE)

SUBGHZ_HSEINTRIMR setting

time

0.1

Table 61. HSE32 TCXO regulator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VTCXO

Regulated voltage range for

TCXO voltage supply

VDDOP > VTCXO + 200 mV

1.6

1.7

3.3

ILTCXO

Load current for TCXO regulator -

1.5

TSVTCXO Startup time for TCXO regulator

From enable to regulated voltage

within 25 mV from target

µs

IDDTCXO

Current consumption for TCXO

regulator

Quiescent current

µA

Relative to load current

1.6

ATCXO

Amplitude voltage for external

TCXO applied to OSC_IN pin

Provided through a 220 Ω resistor

in series with a capacitance

(voltage divider)(1)

0.4

0.6

1.2(2) Vpk-pk

1. In order to minimize spurious injection, the capacitance value must be calculated such that an amplitude of

0.4 to 0.5 Vpk-pk on OSC_IN is obtained. For TCXO output voltage of 0.8 Vpk-pk, 10 pF can be used.

2. Clipped-sine output TCXO is required, with the output amplitude not exceeding 1.2 V peak-to-peak.

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