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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32WL55JC датащи(PDF) 103 Page - STMicroelectronics |
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STM32WL55JC датащи(HTML) 103 Page - STMicroelectronics |
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103 / 147 page  DS13293 Rev 2 103/147 STM32WL55/54xx Electrical characteristics 137 Figure 18. HSI16 frequency versus temperature TRIM HSI16 user trimming step Trimming code is not a multiple of 48 0.2 0.3 0.4 % Trimming code is a multiple of 48 –4 –6 –8 DuCy(HSI16) (2) Duty cycle - 45 - 55 ∆Temp(HSI16) HSI16 oscillator frequency drift Tj = 0 to 85 °C –1 - 1 Tj = -40 to 125 °C –2 - 1.5 ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD = 1.8 V to 3.6 V –0.1 - 0.05 tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5 IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Guaranteed by characterization results. 2. Guaranteed by design. Table 64. HSI16 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MSv66006V3 15.6 15.7 15.8 15.9 16 16.1 16.2 16.3 16.4 -40 -20 0 20 40 60 80 100 120 MHz °C Mean Min Max +2 % +1.5 % +1 % -1 % -1.5 % -2 % |
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