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AT45DB021E датащи(PDF) 32 Page - Dialog Semiconductor

номер детали AT45DB021E
подробное описание детали  2-Mbit DataFlash (with Extra 64 kbits) 1.65 V Minimum SPI Serial Flash Memory
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AT45DB021E датащи(HTML) 32 Page - Dialog Semiconductor

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AT45DB021E
DS-AT45DB021E—8789J—03/2021
from the Buffer back into same page of main memory. The operation is internally self-timed and takes place in a
maximum time of tEP. During this time, the RDY/BUSY Status Register indicates that the part is busy.
If a sector is programmed or reprogrammed sequentially page by page, and there is no possibility of a page or
pages of static data, then the programming algorithm shown in Figure 27-1, on page 64, is recommended;
otherwise, if there is a chance that one or m ore pages of a sector contain static data, then the programming
algorithm shown in Figure 27.2, on page 65, is recommended.
Contact Adesto for availability of devices that are specified to exceed the 50,000 cycle cumulative limit.
Note:
The Auto Page Rewrite command uses the same opcodes as the Read-Modify-Write command. If data bytes
are clocked into the device, the device performs a Read-Modify-Write operation. See the Read-Modify-Write
command description on
page 19 for more details.
10.4 Status Register Read
The two-byte Status Register can be used to determine the device's ready/busy status, page size, a Main Memory
Page to Buffer Compare operation result, the sector protection status, Freeze Sector Lockdown status,
erase/program error status, and the device density. The Status Register can be read at any time, including during
an internally self-timed program or erase operation.
To read the Status Register, the CS pin must first be asserted and then the opcode D7h must be clocked into the
device. After the opcode has been clocked in, the device begins outputting Status Register data on the SO pin
during every subsequent clock cycle. After the second byte of the Status Register has been clocked out, the
sequence repeats itself, starting again with the first byte of the Status Register, as long as the CS pin remains
asserted and the clock pin is being pulsed. The data in the Status Register is constantly being updated, so each
repeating sequence can output new data. The RDY/BUSY status is available for both bytes of the Status Register
and is updated for each byte.
Deasserting the CS pin terminates the Status Register Read operation and put the SO pin into a high-impedance
state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Table 10-1. Status Register Format – Byte 1
Note:
R = Readable only.
Bit
Name
Type
(Note:)
Description
7
RDY/BUS
Y
Ready/Busy Status
R
0
Device is busy with an internal operation.
1
Device is ready.
6
COMP
Compare Result
R
0
Main memory page data matches buffer data.
1
Main memory page data does not match buffer data.
5:2
DENSITY
Density Code
R
010
1
2-Mbit
1
PROTEC
T
Sector Protection
Status
R
0
Sector protection is disabled.
1
Sector protection is enabled.
0
PAGE
SIZE
Page Size
Configuration
R
0
Device is configured for standard DataFlash page size (264
bytes).
1
Device is configured for “power of 2” binary page size (256 bytes).



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