AT45DB021E datasheet(15/74 Pages) DIALOG

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AT45DB021E

DS-AT45DB021E—8789J—03/2021

Program and Erase Commands

7.1

Buffer Write

Using the Buffer Write command allows data clocked in from the SI pin to be written directly into the data buffer.

To load data into the Buffer using the standard DataFlash buffer size (264 bytes), an opcode of 84h must be

clocked into the device followed by three address bytes comprised of 15 dummy bits and nine buffer address bits

(BFA8 - BFA0). The nine buffer address bits specify the first byte in the Buffer to be written.

To load data into the Buffer using the binary buffer size (256 bytes), an opcode of 84h must be clocked into the

device followed by 16 dummy bits and eight address bits (A7 - A0). The eight address bits specify the first byte in

the Buffer to be written.

After the last address byte has been clocked into the device, data can then be clocked in on subsequent clock

cycles. If the end of the data buffer is reached, the device wraps around back to the beginning of the Buffer. Data

continue to be loaded into the Buffer until a low-to-high transition is detected on the CS pin.

7.2

Buffer to Main Memory Page Program with Built-In Erase

The Buffer to Main Memory Page Program with Built-In Erase command allows data that is stored in the Buffer to

be written into an erased or programmed page in the main memory array. It is not necessary to pre-erase the page

in main memory to be written because this command automatically erases the selected page prior to the program

cycle.

To perform a Buffer to Main Memory Page Program with Built-In Erase using the standard DataFlash page size

(264 bytes), an opcode of 83h must be clocked into the device followed by three address bytes comprised of five

dummy bits,10 page address bits (PA9 - PA0) that specify the page in the main memory to be written, and nine

dummy bits.

To perform a Buffer to Main Memory Page Program with Built-In Erase using the binary page size (256 bytes), an

opcode of 83h must be clocked into the device followed by three address bytes comprised of six dummy bits, 10

page address bits (A17 - A8) that specify the page in the main memory to be written, and eight dummy bits.

When a low-to-high transition occurs on the CS pin, the device first erases the selected page in main memory (the

erased state is a logic 1) and then programs the data stored in the Buffer into that same page in main memory.

Both erasing and programming of the page are internally self-timed and take place in a maximum time of tEP.

During this time, the RDY/BUSY bit in the Status Register indicates that the device is busy.

The device also incorporates intelligent erase and program algorithms that can detect when a byte location fails to

erase or program properly. If an erase or programming error arises, it is indicated by the EPE bit in the Status

7.3

Buffer to Main Memory Page Program without Built-In Erase

The Buffer to Main Memory Page Program without Built-In Erase command allows data that is stored in the Buffer

to be written into a pre-erased page in the main memory array. It is necessary that the page in main memory to be

written be previously erased in order to avoid programming errors.

To perform a Buffer to Main Memory Page Program without Built-In Erase using the standard DataFlash page size

(264 bytes), an opcode of 88h must be clocked into the device followed by three address bytes comprised of five

dummy bits,10 page address bits (PA9 - PA0) that specify the page in the main memory to be written, and nine

dummy bits.

To perform a Buffer to Main Memory Page Program using the binary page size (256 bytes), an opcode 88h must

be clocked into the device followed by three address bytes comprised of six dummy bits, 10 page address bits

(A17 - A8) that specify the page in the main memory to be written, and eight dummy bits.

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