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AT45DB021E датащи(PDF) 2 Page - Dialog Semiconductor |
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AT45DB021E датащи(HTML) 2 Page - Dialog Semiconductor |
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2 / 74 page ![]() DS-AT45DB021E--8789J--3/2021 AT45DB021E 2-Mbit DataFlash (with Extra 64 kbits) 1.65 V Minimum SPI Serial Flash Memory Features Single 1.65 V - 3.6 V supply Serial Peripheral Interface (SPI) compatible - Supports SPI modes 0 and 3 - Supports RapidS™ operation Continuous read capability through entire array - Up to 85 MHz - Low-power read option up to 15 MHz - Clock-to-output time (tV) of 6 ns maximum User-configurable page size - 256 bytes per page - 264 bytes per page (default) - Page size can be factory pre-configured for 256 bytes One SRAM data buffer (256/264 bytes) Flexible programming options - Byte/Page Program (1 to 256/264 bytes) directly into main memory - Buffer Write - Buffer to Main Memory Page Program Flexible erase options - Page Erase (256/264 bytes) - Block Erase (2 kB) - Sector Erase (32 kB) - Chip Erase (2 Mbits) Program and Erase Suspend/Resume Advanced hardware and software data protection features - Individual sector protection - Individual sector lockdown to make any sector permanently read-only 128-byte, One-Time Programmable (OTP) Security Register - 64 bytes factory programmed with a unique identifier - 64 bytes user programmable Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low power dissipation - 200 nA Ultra-Deep Power-Down current (typical) - 3 µA Deep Power-Down current (typical) - 25 µA Standby current (typical @ 20 MHz) - 4.5 mA Active Read current (typical)) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Complies with full industrial temperature range Green (Pb/Halide-free/RoHS compliant) packaging options - 8-lead SOIC (0.150" wide and 0.208" wide) - 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) - 8-ball (6 x 4 Array) Wafer Level Chip Scale Package - Die in Wafer Form |
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