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ADA4097-1BUJZ-R5 датащи(PDF) 8 Page - Analog Devices

номер детали ADA4097-1BUJZ-R5
подробное описание детали  50 V, 130 kHz, 32.5 關A, Robust, Over-The-Top Precision Op Amp
PDF  27 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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ADA4097-1BUJZ-R5 датащи(HTML) 8 Page - Analog Devices

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ADA4097-1
Data Sheet
Rev. 0 | Page 8 of 27
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage1
Transient
60 V
Continuous
50 V
Power Dissipation (PD)
See Figure 3
Differential Input Voltage
±80 V
±IN Pin Voltage
Continuous
−10 V to +80 V
Survival
−15 V to +80 V
±IN Pin Current
10 mA
SHDN Pin Voltage
−0.3 V to +60 V
Storage Temperature Range
−65°C to +150°C
Operating Temperature Range
−55°C to +150°C
Lead Temperature (Soldering, 10 sec)
300°C
TJ
175°C
1 Maximum supply voltage is limited by the TDDB of the on-chip capacitor
oxides. The amplifier tolerates temporary transient overshoot up to the
specified transient maximum rating. The continuous operating supply
voltage must be limited to no more than 50 V.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
TJ exceeding 125°C promotes accelerated aging. The ADA4097-1
demonstrates ±25 V supply operation beyond 1000 hours at
TA = 150°C.
MAXIMUM POWER DISSIPATION
The maximum safe PD on the device is limited by the associated
rise in either TC or TJ on the die. At approximately TC = 150°C,
which is the glass transition temperature, the properties of the
plastic changes. Exceeding this temperature limit, even temporarily,
may change the stresses that the package exerts on the die, which
permanently shifts the parametric performance of the ADA4097-1.
Exceeding TJ = 175°C for an extended period may result in changes
in the silicon devices and may potentially cause failure of the device.
The PD on the package is the sum of the quiescent power dissipation
and the power dissipated in the package due to the output load
drive. The quiescent power is expressed as VSY × ISY, where ISY is
the quiescent current.
The PD due to the load drive depends on the application. The PD
due to load drive is calculated by multiplying the load current
by the associated voltage drop across the device. RMS voltages
and currents must be used in these calculations.
Airflow increases heat dissipation, effectively reducing θJA.
Additional metal that is directly in contact with the package leads
from metal traces through vias, ground, and power planes
reduces θJA.
Figure 3 shows the maximum PD vs. TA for the single and dual
6-lead TSOT packages on a JEDEC standard, 4-layer board, with
−VS connected to a pad that is thermally connected to a printed
circuit board (PCB) plane. θJA values are approximations.
1.4
0
0.4
0.8
1.2
0.2
0.6
1.0
–60
150
60
–30
90
0120
30
AMBIENT TEMPERATURE (°C)
Figure 3. Maximum Power Dissipation vs. Ambient Temperature
THERMAL RESISTANCE
Thermal performance is directly linked to PCB design and
operating environment. Careful attention to PCB thermal
design is required.
θJA is the junction to ambient thermal resistance.
Table 4. Thermal Resistance
Package Type
θJA
Unit
UJ-6
192
C/W
ELECTROSTATIC DISCHARGE (ESD) RATINGS
The following ESD information is provided for handling of
ESD-sensitive devices in an ESD protected area only.
Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.
Field induced charged device model (FICDM) per
ANSI/ESDA/JEDEC JS-002.
ESD Ratings for ADA4097-1
Table 5. ADA4097-1, 6-Lead TSOT
ESD Model
Withstand Threshold
Class
HBM
±2 kV
3A
FICDM
±1.25 kV
3
ESD CAUTION



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