STM32G031F6 datasheet(48/117 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32G031x4/x6/x8

48/117

DS12992 Rev 2

5.3.4

Embedded voltage reference

The parameters given in Table 24 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 21: General operating

conditions.

VPVD5

PVD threshold 5

VDD rising

2.80

2.91

3.03

VDD falling

2.70

2.81

2.93

VPVD6

PVD threshold 6

VDD rising

2.90

3.01

3.14

VDD falling

2.80

2.91

3.04

Vhyst_POR_PDR

Hysteresis of VPOR and VPDR

Hysteresis in

continuous

mode

-20

Hysteresis in

other mode

-30

Vhyst_BOR_PVD

Hysteresis of VBORx and VPVDx

100

IDD(BOR_PVD)(2)

BOR and PVD consumption

1.1

1.6

µA

1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.

2. Guaranteed by design.

Table 23. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

Table 24. Embedded internal voltage reference

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

-40°C < TJ < 130°C

1.182 1.212

1.232

tS_vrefint (1)

ADC sampling time when reading

the internal reference voltage

-4(2)

µs

tstart_vrefint

Start time of reference voltage

buffer when ADC is enable

12(2)

µs

IDD(VREFINTBUF)

VREFINT buffer consumption from

VDD when converted by ADC

12.5

20(2)

µA

∆VREFINT

Internal reference voltage spread

over the temperature range

VDD = 3 V

7.5(2)

TCoeff_vrefint

Temperature coefficient

50(2)

ppm/°C

ACoeff

Long term stability

1000 hours, T = 25 °C

300

1000(2)

ppm

VDDCoeff

Voltage coefficient

3.0 V < VDD < 3.6 V

250

1200(2)

ppm/V

VREFINT_DIV1

1/4 reference voltage

VREFINT

VREFINT_DIV2

1/2 reference voltage

VREFINT_DIV3

3/4 reference voltage

1. The shortest sampling time can be determined in the application by multiple iterations.

2. Guaranteed by design.

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