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TMS29F010-12CSFML датащи(PDF) 17 Page - Texas Instruments

номер детали TMS29F010-12CSFML
подробное описание детали  131072 BY 8-BIT FLASH MEMORY
PDF  36 Pages
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TMS29F010-12CSFML датащи(HTML) 17 Page - Texas Instruments

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TMS29F010
131072 BY 8-BIT
FLASH MEMORY
SMJS840A – NOVEMBER 1997 – REVISED JUNE 1998
17
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
timing requirements controlled by E (see Figure 5)
ALTERNATE
’29F010-70
’29F010-90
UNIT
SYMBOL
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
tAVAV
Cycle time, write
tc(W)
70
90
ns
tEHEH1
Cycle time, programming operation
18
18
µs
tEHEH2
Cycle time, sector-erase operation (see Note 11)
1
15
1
15
s
tEHEH3
Cycle time, chip-erase operation (see Note 12)
2
60
2
60
s
tELAX
Hold time, address
th(A)
45
45
ns
tEHDX
Hold time, data
th(D)
0
0
ns
tEHWH
Hold time, W
th(W)
0
0
ns
tELEH
Pulse duration, E low
tw(EL)
35
45
ns
tEHEL
Pulse duration, E high
tw(EH)
20
20
ns
tGHEL
Recovery time, read-before-write
trec(R)
0
0
ns
tAVEL
Setup time, address
tsu(A)
0
0
ns
tDVEH
Setup time, data
tsu(D)
30
45
ns
tWLEL
Setup time, W
tsu(W)
0
0
ns
NOTES: 11. Timing diagram of E-controlled sector-erase operation not enclosed.
12. Timing diagram of E-controlled chip-erase operation not enclosed.
ALTERNATE
’29F010-10
’29F010-12
UNIT
SYMBOL
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
tAVAV
Cycle time, write
tc(W)
100
120
ns
tEHEH1
Cycle time, programming operation
18
18
µs
tEHEH2
Cycle time, sector-erase operation (see Note 11)
1
15
1
15
s
tEHEH3
Cycle time, chip-erase operation (see Note 12)
2
60
2
60
s
tELAX
Hold time, address
th(A)
45
50
ns
tEHDX
Hold time, data
th(D)
0
0
ns
tEHWH
Hold time, W
th(W)
0
0
ns
tELEH
Pulse duration, E low
tw(EL)
45
50
ns
tEHEL
Pulse duration, E high
tw(EH)
20
20
ns
tGHEL
Recovery time, read-before-write
trec(R)
0
0
ns
tAVEL
Setup time, address
tsu(A)
0
0
ns
tDVEH
Setup time, data
tsu(D)
45
50
ns
tWLEL
Setup time, W
tsu(W)
0
0
ns
NOTES: 11. Timing diagram of E-controlled sector-erase operation not enclosed.
12. Timing diagram of E-controlled chip-erase operation not enclosed.



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