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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TMS29F010-12CSFML датащи(PDF) 14 Page - Texas Instruments |
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TMS29F010-12CSFML датащи(HTML) 14 Page - Texas Instruments |
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14 / 36 page  TMS29F010 131072 BY 8-BIT FLASH MEMORY SMJS840A – NOVEMBER 1997 – REVISED JUNE 1998 14 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 switching characteristics over recommended ranges of supply voltage and ambient temperature, read-only operation† (see Figure 2, Figure 11, Figure 13, Figure 15, and Figure 17) PARAMETER ALTERNATE ’29F010-70 ’29F010-90 ’29F010-10 ’29F010-12 UNIT PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNIT tAVQV Access time, address ta(A) 70 90 100 120 ns tELQV Access time, E ta(E) 70 90 100 120 ns tGLQV Access time, G ta(G) 30 35 45 50 ns tAVAV Cycle time, read tc(R) 70 90 100 120 ns tEHQZ Disable time, E to high impedance tdis(E) 20 20 20 30 ns tGHQZ Disable time, G to high impedance tdis(G) 20 20 20 30 ns tAXQX Hold time, output from address, E or G change th(D) 0 0 0 0 ns tWHGL1 Hold time, G read 0 0 0 0 ns tWHGL2 Hold time, G toggle and data polling 10 10 10 10 ns † See Figure 1 for AC test output load circuit and voltage waveforms. |
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