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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TMS29F010-12CSFML датащи(PDF) 16 Page - Texas Instruments |
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TMS29F010-12CSFML датащи(HTML) 16 Page - Texas Instruments |
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16 / 36 page  TMS29F010 131072 BY 8-BIT FLASH MEMORY SMJS840A – NOVEMBER 1997 – REVISED JUNE 1998 16 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 timing requirements controlled by W (see Figure 4, Figure 7, Figure 9, Figure 11, Figure 13, Figure 15, and Figure 17) (continued) ALTERNATE ’29F010-10 ’29F010-12 UNIT SYMBOL MIN TYP MAX MIN TYP MAX UNIT tAVAV Cycle time, write tc(W) 100 120 ns tWHWH1 Cycle time, programming operation tc(W)PR 18 18 µs tWHWH2 Cycle time, sector-erase operation 1 15 1 15 s tWHWH3 Cycle time, chip-erase operation 2 60 2 60 s tWLAX Hold time, address th(A) 45 50 ns tWHDX Hold time, data valid after W high th(D) 0 0 ns tWHEH Hold time, E th(E) 0 0 ns tWHWL Pulse duration, W high tw(WH) 20 20 ns tWLWH1 Pulse duration, W low tw(WL) 45 50 ns tWLWH2 Pulse duration, W low (see Note 9) 100 100 µs tWLWH3 Pulse duration, W low (see Note 10) 10 10 ms tGHWL Recovery time, read-before-write trec(R) 0 0 ns tAVWL Setup time, address tsu(A) 0 0 ns tDVWH Setup time, data tsu(D) 45 50 ns tAVGH Setup time, A0 and A6 low and A1 high to G high (see Note 9) 0 0 ns tAVGEH Setup time, A0 low and A1 and A6 high to G and E high (see Note 10) 0 0 ns tELWL Setup time, E tsu(E) 0 0 ns tGHWH Setup time, G 0 0 ns tVCEL Setup time, VCC 50 50 µs tEHVWL Setup time, E VID to W (see Note 10) 4 4 µs tGHVWL Setup time, G VID to W (see Notes 9 and 10) 4 4 µs tWHAH Setup time, W high to A6 going high (see Note 10) 0 0 ns tHVT Transition time, VID (see Notes 9 and 10) 4 4 µs NOTES: 9. Sector-protect timing (see Figure 15) 10. Sector-unprotect timing (see Figure 17) |
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