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TMS29F010-12CSFML датащи(PDF) 6 Page - Texas Instruments

номер детали TMS29F010-12CSFML
подробное описание детали  131072 BY 8-BIT FLASH MEMORY
PDF  36 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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TMS29F010-12CSFML датащи(HTML) 6 Page - Texas Instruments

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TMS29F010
131072 BY 8-BIT
FLASH MEMORY
SMJS840A – NOVEMBER 1997 – REVISED JUNE 1998
6
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
algorithm-selection mode
The algorithm-selection mode provides access to a binary code that matches the device with its proper
programming- and erase-command operations. This mode is activated when VID (11.5 V to 12.5 V) is placed
on address pin A9. Address pin A1 must be logic-low. Two bytes of code are accessed by toggling address pin
A0 from VIL to VIH. All other address pins can be logic-low or logic-high.
The algorithm-selection code can also be read by using the command register. This is useful when VID is not
available to be placed on address pin A9. Table 2 shows the binary algorithm-selection codes for the
TMS29F010.
Table 2. Algorithm-Selection Codes
ALGORITHM SELECTION
A0
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
HEX
Byte 0
0
0
0
0
0
0
0
0
1
01h
Byte 1
1
0
0
1
0
0
0
0
0
20h
† A1 = VIL, E = G = VIL
erasure and programming
Erasure and programming of the TMS29F010 are accomplished by writing a sequence of commands using
standard microprocessor-write timings. The commands are written to a command register and input to the
command-state machine (CSM). The CSM interprets the command entered and initiates program and erase
operations as instructed. The CSM acts as the interface between the write-state machine (WSM) and the
external chip operations. The WSM controls all voltage generation, pulse generation, preconditioning, and
verification of the memory contents. Program and sector/chip-erase functions are fully automatic. Once the end
of a program or erase operation is reached, the device internally resets to the read mode. If VCC drops below
the low-voltage-detect level (VLKO), any operation in progress is aborted and the device resets to the read mode.
If a byte-program or chip-erase operation is in progress, additional program/erase commands are ignored until
the operation ends.
command definitions
Device operating modes are selected by writing specific address and data sequences into the command
register. Table 3 defines the valid command sequences. Writing incorrect address and data values or writing
them in the incorrect sequence causes the device to reset to the read mode. The command register does not
occupy an addressable memory location. The register stores the command sequence, along with the address
and data needed by the memory array. Commands are written by setting E = VIL and G = VIH, and bringing W
from VIH to VIL. Addresses are latched on the falling edge of W and data is latched on the rising edge of W.
Holding W = VIL and toggling E is an alternative method. See the byte-program and chip/sector-erase sections
for a more complete description.



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