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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M50FLW080A датащи(PDF) 38 Page - STMicroelectronics |
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M50FLW080A датащи(HTML) 38 Page - STMicroelectronics |
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38 / 64 page  Program and Erase times M50FLW080A, M50FLW080B 38/64 7 Program and Erase times The Program and Erase times are shown in Table 18. Table 18. Program and Erase times Parameter Interface Test Condition Min Typ(1) 1. TA = 25°C, VCC = 3.3V Max Unit Byte Program 10 200 µs Double Byte Program FWH VPP = 12V ± 5% 10(2) 2. Time to program two Bytes. 200 µs Quadruple Byte Program A/A Multiplexed FWH VPP = 12V ± 5% 10(3) 3. Time to program four Bytes. 200 µs Block Program VPP = 12V ± 5% 0.1(4) 4. Time obtained executing the Quadruple Byte Program command. 5 s VPP = VCC 0.4 5 Sector Erase (4 KBytes)(5) 5. Sampled only, not 100% tested. VPP = 12V ± 5% 0.4 4 s VPP = VCC 0.5 5 Block Erase (64 KBytes) VPP = 12V ± 5% 0.75 8 s VPP = VCC 110 Chip Erase A/A Multiplexed VPP = 12V ± 5% 10 s Program/Erase Suspend to Program pause(5) 5 µs Program/Erase Suspend to Block Erase/Sector Erase pause(5) 30 µs |
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