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S71PL129JC0 датащи(PDF) 78 Page - SPANSION |
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S71PL129JC0 датащи(HTML) 78 Page - SPANSION |
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78 / 149 page ![]() 78 S29PL129J for MCP S29PL129J_MCP_00_A0 June 4, 2004 Advance Info rmation Notes: 1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 100,000 cycles. Additionally, programming typicals assume checkerboard pattern. All values are subject to change. 2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. All values are subject to change. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 12 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 100,000 cycles. BGA Pin Capacitance Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. Figure 23. Timing Diagram for Alternating Between CE1# and CE2# Control Table 25. Erase And Programming Performance Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.5 2 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time PL129J 135 216 sec Word Program Time 6 100 µs Excludes system level overhead (Note 5) Accelerated Word Program Time 4 60 µs Chip Program Time (Note 3) PL129J 50.4 200 sec Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6.3 7 pF COUT Output Capacitance VOUT = 0 7.0 8 pF CIN2 Control Pin Capacitance VIN = 0 5.5 8 pF CIN3 WP#/ACC Pin Capacitance VIN = 0 11 12 pF CE1# tCCR tCCR CE2# |
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