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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S71PL129JC0 датащи(PDF) 76 Page - SPANSION |
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S71PL129JC0 датащи(HTML) 76 Page - SPANSION |
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76 / 149 page  76 S29PL129J for MCP S29PL129J_MCP_00_A0 June 4, 2004 Advance Info rmation Controlled Erase Operations Notes: 1. Not 100% tested. 2. See the Table 25, “Erase And Programming Performance,” on page 78 for more information. Table 22. Alternate CE# Controlled Erase and Program Operations Parameter Speed Options JEDEC Std Description 55 60 65 70 Unit tAVAV tWC Write Cycle Time (Note 1) Min 55 60 65 70 ns tAVWL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 30 35 ns tDVEH tDS Data Setup Time Min 25 30 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE1# or CE#2 Pulse Width Min 35 40 ns tEHEL tCPH CE1# or CE#2 Pulse Width High Min 20 25 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Typ 6 µs tWHWH1 tWHWH1 Accelerated Programming Operation (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec |
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