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S71PL129JC0 датащи(PDF) 43 Page - SPANSION |
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S71PL129JC0 датащи(HTML) 43 Page - SPANSION |
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43 / 149 page ![]() June 4, 2004 S29PL129J_MCP_00_A0 S29PL129J for MCP 43 Advance Informatio n Table 9. System Interface String Addresses Data Description 1Bh 0027h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 0036h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0003h Typical timeout per single byte/word write 2N µs 20h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 0009h Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0004h Max. timeout for byte/word write 2N times typical 24h 0000h Max. timeout for buffer write 2N times typical 25h 0004h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Table 10. Device Geometry Definition Addresses Data Description 27h 0018h (PL129J) Device Size = 2N byte 28h 29h 0001h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 0003h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 00FDh (PL129J) Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100) 32h 33h 34h 0000h 0000h 0001h 35h 36h 37h 38h 0007h 0000h 0020h 0000h Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100) 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100) Table 11. Primary Vendor-Specific Extended Query Addresses Data Description 40h 41h 42h 0050h 0052h 0049h Query-unique ASCII string “PRI” |
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