ADF41513 datasheet(6/33 Pages) AD

6 / 33 page

ADF41513

Preliminary Technical Data

Rev. PrL | Page 6 of 33

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

AVDDX to GND1

−0.3 V to +3.6 V

VP to GND

−0.3 V to +3.6 V

VP to AVDDX

−0.3 V to +0.3 V

Digital Input/Output Voltage to GND

−0.3 V to VDD + 0.3 V

Analog Input/Output Voltage to GND

−0.3 V to VP + 0.3 V

RFINA, RFINB to GND

−0.3 V to +3.6 V

RFINA to RFINB1

±1.4 V

REFIN to GND

−0.3 V to +2.1 V

Operating Temperature Range

Industrial

−40°C to +85°C

Storage Temperature Range

−65°C to +125°C

Maximum Junction Temperature

150°C

Reflow Soldering

Peak Temperature

260°C

Time at Peak Temperature

40 sec

Transistor Count

CMOS

215,726

Bipolar

1625

Approximately 13 dBm into a 50 Ω input.

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

This device is a high performance RF IC with an electrostatic

discharge (ESD) rating of <2 kV, and the device is ESD sensitive.

Take proper precautions for handling and assembly.

ESD CAUTION

ADF41513 датащи(PDF) 6 Page - Analog Devices

ADF41513 датащи(HTML) 6 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33

датащи скачать

ссылки URL