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P89LPC907FD датащи(PDF) 40 Page - NXP Semiconductors

номер детали P89LPC907FD
подробное описание детали  8-bit microcontrollers with two-clock 80C51 core 1 kB 3 V Flash with 128-byte RAM
PDF  51 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

P89LPC907FD датащи(HTML) 40 Page - NXP Semiconductors

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Philips Semiconductors
P89LPC906/907/908
8-bit microcontrollers with two-clock 80C51 core
Product data
Rev. 05 — 17 December 2004
40 of 51
9397 750 14467
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8.24.2
Dual data pointers
The dual Data Pointers (DPTR) provides two different Data Pointers to specify the
address used with certain instructions. The DPS bit in the AUXR1 register selects
one of the two Data Pointers. Bit 2 of AUXR1 is permanently wired as a logic ‘0’ so
that the DPS bit may be toggled (thereby switching Data Pointers) simply by
incrementing the AUXR1 register, without the possibility of inadvertently altering other
bits in the register.
8.25 Flash program memory
8.25.1
General description
The P89LPC906/907/908 Flash memory provides in-circuit electrical erasure and
programming. The Flash can be erased, read, and written as bytes. The Sector and
Page Erase functions can erase any Flash sector (256 bytes) or page (16 bytes). The
Chip Erase operation will erase the entire program memory. In-Circuit Programming
using standard commercial programmers is available. In addition, In-Application
Programming (IAP) and byte erase allows code memory to be used for non-volatile
data storage. On-chip erase and write timing generation contribute to a user-friendly
programming interface. The P89LPC906/907/908 Flash reliably stores memory
contents even after 100,000 erase and program cycles. The cell is designed to
optimize the erase and programming mechanisms. The P89LPC906/907/908 uses
VDD as the supply voltage to perform the Program/Erase algorithms.
8.25.2
Features
Programming and erase over the full operating voltage range.
Byte-erase allowing code memory to be used for data storage.
Read/Programming/Erase using ICP.
Any flash program/erase operation in 2 ms.
Programming with industry-standard commercial programmers.
Programmable security for the code in the Flash for each sector.
More than 100,000 erase/program cycles for each byte.
10-year minimum data retention.
8.25.3
Flash organization
The P89LPC906/907/908 program memory consists of four 256 byte sectors. Each
sector can be further divided into 16-byte pages. In addition to sector erase, page
erase, and byte erase, a 16-byte page register is included which allows from 1 to 16
bytes of a given page to be programmed at the same time, substantially reducing
overall programming time. In addition, erasing and reprogramming of
user-programmable configuration bytes including UCFG1, the Boot Status Bit, and
the Boot Vector is supported.
8.25.4
Flash programming and erasing
Different methods of erasing or programming of the Flash are available. The Flash
may be programmed or erased in the end-user application (IAP-Lite) under control of
the application’s firmware. Another option is to use the In-Circuit Programming (ICP)
mechanism. This ICP system provides for programming through a serial clock- serial



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