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LTC2435-1IGN датащи(PDF) 28 Page - Linear Technology |
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LTC2435-1IGN датащи(HTML) 28 Page - Linear Technology |
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28 / 40 page ![]() LTC2435/LTC2435-1 28 24351fa APPLICATIO S I FOR ATIO Figure 21. +FS Error vs RSOURCE at REF+ or REF– (Small CIN) Figure 22. –FS Error vs RSOURCE at REF+ or REF– (Small CIN) gain errors will be insignificant (about 1% of their respec- tive values over the entire temperature and voltage range). Even for the most stringent applications, a one-time calibration operation may be sufficient. In addition to the input sampling charge, the input ESD protection diodes have a temperature dependent leakage current. This current, nominally 1nA (±10nA max), results in a small offset shift. A 100Ω source resistance will create a 0.1µV typical and 1µV maximum offset voltage. Reference Current In a similar fashion, the LTC2435/LTC2435-1 sample the differential reference pins REF+ and REF– transferring small amount of charge to and from the external driving circuits thus producing a dynamic reference current. This current does not change the converter offset, but it may degrade the gain and INL performance. The effect of this current can be analyzed in the same two distinct situa- tions. For relatively small values of the external reference capaci- tors (CREF < 0.01µF), the voltage on the sampling capacitor settles almost completely and relatively large values for the source impedance result in only small errors. Such values for CREF will deteriorate the converter offset and gain performance without significant benefits of reference filtering and the user is advised to avoid them. Larger values of reference capacitors (CREF > 0.01µF) may be required as reference filters in certain configurations. Such capacitors will average the reference sampling charge and the external source resistance will see a quasi con- stant reference differential impedance. For the LTC2435, when FO = LOW (internal oscillator and 60Hz notch), the typical differential reference resistance is 15.6MΩ which will generate a +FS gain error of approximately 0.032ppm for each ohm of source resistance driving REF+ or REF–. When FO = HIGH (internal oscillator and 50Hz notch), the typical differential reference resistance is 18.7MΩ which will generate a +FS gain error of approximately 0.027ppm for each ohm of source resistance driving REF+ or REF–. For the LTC2435-1, the typical differential reference resis- tance is 17.1MΩ which will generate a +FS gain error of approximately 0.029ppm for each ohm of source resis- tance driving REF+ or REF–. When FO is driven by an external oscillator with a frequency fEOSC (external conver- sion clock operation), the typical differential reference resistance is 2.4 • 1012/fEOSCΩ and each ohm of source resistance driving REF+ or REF– will result in 0.21 • 10–6 • fEOSCppm +FS gain error. The effect of the source resistance on the two reference pins is additive with respect to this gain error. The typical +FS and –FS errors for various combinations of source resistance seen by the REF+ and REF– pins and external capacitance CREF connected to these pins are shown in Figures 21, 22, 23 and 24. RSOURCE (Ω) 1 100 90 80 70 60 50 40 30 20 10 0 –10 10000 2435 F21 10 100 1000 100000 CIN = 0pF CIN = 0.01µF VCC = 5V VREF+ = 5V VREF– = GND VIN+ = 3.75V VIN– = 1.25V FO = GND TA = 25°C CIN = 100pF CIN = 0.001µF RSOURCE (Ω) 1 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –100 10000 2435 F22 10 100 1000 100000 CIN = 0pF CIN = 0.01µF VCC = 5V VREF+ = 5V VREF– = GND VIN+ = 1.25V VIN– = 3.75V FO = GND TA = 25°C CIN = 0.001µF CIN = 100pF |
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