STM8L101X2 datasheet(47/88 Pages) STMICROELECTRONICS

номер детали	STM8L101x2

подробное описание детали	Auto-wakeup unit

PDF	88 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

47 / 88 page

DocID15275 Rev 16

47/88

STM8L101x1 STM8L101x2 STM8L101x3

Electrical parameters

Low speed internal RC oscillator (LSI)

Figure 19. Typical LSI RC frequency vs. VDD

9.3.5

Memory characteristics

TA = -40 to 125 °C unless otherwise specified.

Table 23. LSI oscillator characteristics (1)

1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fLSI

Frequency

kHz

fdrift(LSI)

LSI oscillator frequency

drift(2)

2. For each individual part, this value is the frequency drift from the initial measured frequency.

0 °C

≤TA ≤ 85 °C

-12

Table 24. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode (1)

1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware

registers (only in Halt mode). Guaranteed by characterization results.

Flash memory

Halt mode (or Reset)

1.4

Table 25. Flash program memory

Symbol

Parameter

Conditions

Min

Typ

Max

(1)

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fMASTER = 16 MHz

1.65

3.6

tprog

Programming time for 1- or 64-byte (block)

erase/write cycles (on programmed byte)

Programming time for 1- to 64-byte (block)

write cycles (on erased byte)

STM8L101x2 датащи(PDF) 47 Page - STMicroelectronics

STM8L101x2 датащи(HTML) 47 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88

датащи скачать

ссылки URL