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ST72344K2 датащи(PDF) 32 Page - STMicroelectronics |
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ST72344K2 датащи(HTML) 32 Page - STMicroelectronics |
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32 / 247 page ![]() Data EEPROM ST72344xx, ST2345xx 32/247 Doc ID 12321 Rev 6 Read operation (E2LAT = 0) The EEPROM can be read as a normal ROM location when the E2LAT bit of the EECSR register is cleared. On this device, Data EEPROM can also be used to execute machine code. Take care not to write to the Data EEPROM while executing from it. This would result in an unexpected code being executed. Write operation (E2LAT = 1) To access the write mode, the E2LAT bit has to be set by software (the E2PGM bit remains cleared). When a write access to the EEPROM area occurs, the value is latched inside the 32 data latches according to its address. When E2PGM bit is set by the software, all the previous bytes written in the data latches (up to 32) are programmed in the EEPROM cells. The effective high address (row) is determined by the last EEPROM write sequence. To avoid wrong programming, the user must take care that all the bytes written between two programming sequences have the same high address: only the five Least Significant Bits of the address can change. The programming cycle is fully completed when the E2PGM bit is cleared. Note: Care should be taken during the programming cycle. Writing to the same memory location will over-program the memory (logical AND between the two write access data results) because the data latches are only cleared at the end of the programming cycle and by the falling edge of the E2LAT bit. It is not possible to read the latched data. This note is illustrated by the Figure 10. Figure 8. Data EEPROM programming flowchart READ MODE E2LAT = 0 E2PGM = 0 WRITE MODE E2LAT = 1 E2PGM = 0 READ BYTES IN EEPROM AREA WRITE UP TO 32 BYTES IN EEPROM AREA (with the same 11 MSB of the address) START PROGRAMMING CYCLE E2LAT=1 E2PGM=1 (set by software) E2PGM 01 CLEARED BY HARDWARE |
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