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ST72344K2 датащи(PDF) 212 Page - STMicroelectronics |
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ST72344K2 датащи(HTML) 212 Page - STMicroelectronics |
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212 / 247 page ![]() Electrical characteristics ST72344xx, ST2345xx 212/247 Doc ID 12321 Rev 6 13.7 Memory characteristics TA = –40°C to 85°C, unless otherwise specified. Table 100. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode (1) 1. Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under reset) or in hardware registers (only in Halt mode). Guaranteed by construction, not tested in production. Halt mode (or reset) 1.6 V Table 101. Flash program memory Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash write/erase Refer to operating range of VDD with TA, Table 87 2.7 5.5 V tprog Programming time for 1~32 bytes (1) 1. Up to 32 bytes can be programmed at a time. TA=−40 to +85°C 5 10 ms tRET Data retention (2) 2. Data based on reliability test results and monitored in production. TA=+55°C (3) 3. The data retention time increases when the TA decreases. 20 years NRW Write erase cycles TA=+25°C 10,000 (4) 4. Design target value pending full product characterization. cycles IDD Supply current (5) 5. Guaranteed by Design. Not tested in production. Read / Write / Erase modes fCPU = 8 MHz, VDD = 5.5V 2.6 mA No Read/No Write Mode 100 µA Power down mode / Halt 0 0.1 µA Table 102. EEPROM data memory Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for EEPROM write/erase Refer to operating range of VDD with TA, Table 87: General operating conditions 2.7 5.5 V tprog Programming time for 1~32 bytes TA=−40 to +85°C 5 10 ms tret Data retention(1) 1. Data based on reliability test results and monitored in production. TA=+55°C (2) 2. The data retention time increases when the TA decreases. 20 years NRW Write erase cycles TA=+25°C 300,000 (3) 3. Design target value pending full product characterization. cycles |
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