L9659 datasheet(14/51 Pages) STMICROELECTRONICS

14 / 51 page

Electrical specifications

L9659

14/51

Doc ID 022048 Rev 2

MOS diagnostics

I_MOS

MOS test max current

Normal conditions

ISVRCM

tSHUTOFF

LS/HS MOS turn off under

fault condition

Time is measured from the

valid LS/ HS MOS current >

100mA to the LS/HS turn off

µs

tFETtimeout

FET timeout

Normal Conditions

100

µs

High squib resistance diagnostics

RSQHIZ

High load resistance

threshold

-1.07

2.1



IHR

High resistance current

threshold

-ISTG

tDIAGTIMEOUT MOS diagnostic delay time

From/CS  until test results

are valid, CSQHx= 0.12µF

CSQLx= 0.12µF

300

µs

Squib resistance diagnostics

VOH

Output voltage AOUT

High saturation voltage;

IAOUT = -500µA

VDD-

0.2

VOL

Low Saturation Voltage;

IAOUT = +500µA

0.2

Tri-State Current AOUT

AOUT = VDD

µA

AOUT = 0V

-1

µA

RSQB RANGE Load resistance range

10.0



VAOUT

Resistance measurement

analog output tolerance

VAOUT =

  R

SQB < 3.5

VAOUT-

0.095V

VAOUT+

0.095V

3.5

  R

SQB  10

VAOUT·

0.95V

VAOUT·

1.05V

ISRC

Resistance measurement

current source

VDD = 5.0V; VSDIAG = 7.0V

to 37V

ISINK

Resistance measurement

current sink

IPD OFF, VSQLx = 4 V

ISLEW

Rmeas current di/dt

30% - 70% of ISRC

mA/µs

Vcmpr

Voltage threshold on squib

pin to shutdown ISRC

2.65

3.25

tisrcshtdwn

Shutdown time

Guaranteed by design

µs

VLSDrsqb

LSD (V_SQL) voltage during

resistance measure

0.8

2.2

Table 7.

Squib deployment drivers and diagnostics - DC electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

VDD

9.75

-----------

0.08

SQB



---------------









L9659 датащи(PDF) 14 Page - STMicroelectronics

L9659 датащи(HTML) 14 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51

датащи скачать

ссылки URL