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ISO8200BQ датащи(PDF) 11 Page - STMicroelectronics

номер детали ISO8200BQ
подробное описание детали  Galvanic isolated octal high-side smart power solid state-relay
PDF  37 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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ISO8200BQ датащи(HTML) 11 Page - STMicroelectronics

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ISO8200BQ
Electrical characteristics
DocID027303 Rev 4
11/37
Table 6: Diagnostic pin and output protection function
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VFAULT
FAULT
pin open-drain voltage
output low
IFAULT = 10 mA
0.4
V
ILFAULT
FAULT
output leakage current
VFAULT = 5 V
1
µA
IPEAK
Maximum DC output current before
limitation
VCC = 24 V
RLOAD
= 0 Ω
1.6
A
ILIM
Short-circuit current limitation
0.7
1.3
1.9
A
Hyst
ILIM tracking limits
0.3
A
TJSD
Junction shutdown temperature
150
170
°C
TJR
Junction reset temperature
150
°C
THIST
Junction thermal hysteresis
20
°C
TCSD
Case shutdown temperature
115
130
145
°C
TCR
Case reset temperature
110
°C
TCHYST
Case thermal hysteresis
20
°C
Vdemag
Output voltage at turn-OFF
IOUT = 0.5 A
ILOAD > = 1 mH
VCC-45
VCC-50
VCC-52
V
Table 7: Power switching characteristics (VCC = 24 V; -40 °C < TJ < 125 °C)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
dV/dt(ON)
Turn-ON voltage slope
IOUT
= 0.5 A, resistive load 48 Ω
-
5.6
-
V/µs
dV/dt(OFF)
Turn-OFF voltage slope
IOUT
= 0.5 A, resistive load 48 Ω
-
2.81
-
V/µs
td(ON)
Turn-ON delay time (1)
IOUT
= 0.5 A, resistive load 48 Ω
-
17
22
µs
td(OFF)
Turn-OFF delay time (1)
IOUT
= 0.5 A, resistive load 48 Ω
-
22
40
µs
tf
Fall time (1)
IOUT
= 0.5 A, resistive load 48 Ω
-
5
-
µs
tr
Rise time (1)
IOUT
= 0.5 A, resistive load 48 Ω
-
5
-
µs
Notes:
(1)See Figure 3: "RDS(on) measurement", Figure 4: "dV/dT" and Figure 6: "td(ON)-td(OFF) direct control mode".



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