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ISO8200BQ датащи(PDF) 8 Page - STMicroelectronics

номер детали ISO8200BQ
подробное описание детали  Galvanic isolated octal high-side smart power solid state-relay
PDF  37 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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ISO8200BQ датащи(HTML) 8 Page - STMicroelectronics

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Absolute maximum ratings
ISO8200BQ
8/37
DocID027303 Rev 4
3
Absolute maximum ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
VCC
Power supply voltage
-0.3
45
V
Vdd
Digital supply voltage
-0.3
6.5
V
VIN
DC input pin voltage (INx, OUT_EN, LOAD ,
SYNC )
-0.3
+6.5
V
VFAULT
Fault pin voltage
-0.3
+6.5
V
IGNDdd
DC digital ground reverse current
-25
mA
IOUT
Channel output current (continuous)
Internally limited
A
IGNDcc
DC power ground reverse current
-250
mA
IR
Reverse output current (per channel)
-5
A
IIN
DC input pin current (INx, OUT_EN, LOAD ,
SYNC )
-10
+ 10
mA
IFAULT
Fault pin current
-10
+ 10
mA
VESD
Electrostatic discharge with human body model
(R = 1.5 kΩ; C = 100 pF)
2000
V
EAS
Single pulse avalanche energy per channel not
simultaneously @Tamb= 125 °C, IOUT = 0.5 A
1.8
J
Single pulse avalanche energy per channel, all
channels driven simultaneously @Tamb= 125 °C,
IOUT = 0.5 A
0.35
PTOT
Power dissipation at Tc = 25 °C
Internally limited (1)
W
TJ
Junction operating temperature
Internally limited(1)
°C
TSTG
Storage temperature
-55 to 150
°C
Notes:
(1)Protection functions are intended to avoid IC damage in fault conditions and are not intended for continuous
operation. Continuous or repetitive operations of protection functions may reduce the IC lifetime.



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