ISO8200BQ datasheet(10/37 Pages) STMICROELECTRONICS

номер детали	ISO8200BQ

подробное описание детали	Galvanic isolated octal high-side smart power solid state-relay

PDF	37 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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Electrical characteristics

ISO8200BQ

10/37

DocID027303 Rev 4

Electrical characteristics

(10.5 V < VCC < 36 V; -40 °C < TJ < 125 °C, unless otherwise specified)

Table 4: Power section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCC(THON)

VCC undervoltage turn-ON

threshold

9.5

10.5

VCC(THOFF)

VCC undervoltage turn-OFF

threshold

VCC(hys)

VCC undervoltage hysteresis

0.25

0.5

VCCclamp

Clamp on VCC pin

Iclamp = 20 mA

RDS(on)

On-state resistance (1)

IOUT = 0.5 A, TJ = 25 °C

IOUT = 0.5 A TJ = 125 °C

0.12

0.24

Rpd

Output pull-down resistor

210

kΩ

ICC

Power supply current

All channels in OFF-

state

All channels in ON-state

ILGND

Ground disconnection output

current

VCC = VGND = 0 V

VOUT = -24 V

500

µA

VOUT(OFF)

Off-state output voltage

Channel OFF and

IOUT = 0 A

IOUT(OFF)

Off-state output current

Channel OFF and

VOUT = 0 V

µA

Notes:

(1)See Figure 3: "RDS(on) measurement"

Table 5: Digital supply voltage

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Vdd

Operating voltage

2.75

5.5

Vdd(THON)

Vdd undervoltage turn-

ON threshold

2.55

2.75

Vdd(THOFF)

Vdd undervoltage turn-

OFF threshold

2.45

2.65

Vdd(hys)

Vdd undervoltage

hysteresis

0.04

0.1

Idd

Idd supply current

Vdd = 5 V and input channel with

a steady logic level

4.5

Vdd = 3.3 V and input channel

with a steady logic level

4.4

5.9

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