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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F446RC датащи(PDF) 91 Page - STMicroelectronics |
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STM32F446RC датащи(HTML) 91 Page - STMicroelectronics |
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91 / 201 page  DocID027107 Rev 5 91/201 STM32F446xC/E Electrical characteristics 174 Figure 21. Typical VBAT current consumption (RTC ON/backup RAM OFF and LSE in low power mode) Table 29. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, RTC ON and LSE oscillator in low power mode 1.46 1.62 1.83 6 11 µA Backup SRAM OFF, RTC ON and LSE oscillator in low power mode 0.72 0.85 1.00 3 5 Backup SRAM ON, RTC ON and LSE oscillator in high drive mode 2.24 2.40 2.64 - - Backup SRAM OFF, RTC ON and LSE oscillator in high drive mode 1.50 1.64 1.86 - - Backup SRAM ON, RTC and LSE OFF 0.74 0.75 0.78 5 10 Backup SRAM OFF, RTC and LSE OFF 0.05 0.05 0.05 2 4 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed based on test during characterization. |
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