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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F446RC датащи(PDF) 90 Page - STMicroelectronics |
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STM32F446RC датащи(HTML) 90 Page - STMicroelectronics |
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90 / 201 page  Electrical characteristics STM32F446xC/E 90/201 DocID027107 Rev 5 Table 28. Typical and maximum current consumptions in Standby mode Symbol Parameter Conditions Typ(1) Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.7 V VDD= 2.4 V VDD = 3.3 V VDD = 3.3 V IDD_STBY Supply current in Standby mode Backup SRAM ON, and LSE oscillator in low power mode 2.43 3.44 4.12 7 20 36 µA Backup SRAM OFF, RTC ON and LSE oscillator in low power mode 1.81 2.81 3.33 6 17 31 Backup SRAM ON, RTC ON and LSE oscillator in high drive mode 3.32 4.33 4.95 8 21 37 Backup SRAM OFF, RTC ON and LSE oscillator in high drive mode 2.57 3.59 4.16 7 18 32 Backup SRAM ON, RTC and LSE OFF 2.03 2.73 3.5 6(3) 19 35(3) Backup SRAM OFF, RTC and LSE OFF 1.28 1.97 2.03 5(3) 16 30(3) 1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA. 2. Guaranteed based on test during characterization unless otherwise specified. 3. Tested in production. |
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