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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ISO5451DW датащи(PDF) 27 Page - Texas Instruments |
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ISO5451DW датащи(HTML) 27 Page - Texas Instruments |
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27 / 38 page  ( ) OL-WC 4 2.5 P = 0.5 20 kHz 650 nC 15 V ( 8 V) + = 72.61 mW 4 + 10 2.5 + 10 æ ö ´ ´ ´ - - ´ ç ÷ è ø VCC2 15V VEE2 8V RG OUT ISO5451 ron-max roff-max QG ISO5451 www.ti.com SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015 Figure 49. Simplified Output Model for Calculating POL-WC 10.2.2.10 Example This examples considers an IGBT drive with the following parameters: ION-PK = 2 A, QG = 650 nC, fINP = 20 kHz, VCC2 = 15V, VEE2 = –8 V (6) Apply the value of the gate resistor RG = 10 Ω. Then, calculating the worst-case output power consumption as a function of RG, using Equation 5 ron-max = worst case output resistance in the on-state: 4 Ω, roff-max = worst case output resistance in the off-state: 2.5Ω, RG = gate resistor yields (7) Because POL-WC = 72.61 mW is below the calculated maximum of POL = 88.25 mW, the resistor value of RG = 10 Ω is suitable for this application. Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 27 Product Folder Links: ISO5451 |
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