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AN4043 датащи(PDF) 48 Page - STMicroelectronics |
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AN4043 датащи(HTML) 48 Page - STMicroelectronics |
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48 / 60 page ![]() Power losses and dissipation AN4043 48/60 Doc ID 022726 Rev 2 More generally, in the case of the device, power is time dependent too. The device temperature can be calculated by using the convolution integral method applied to Equation 31Equation 31, as follows: Equation 32 An alternative method, very useful for the simulator tools, is the transient thermal impedance model, which provides a simple method to estimate the junction temperature rise under a transient condition. By using the thermo-electrical analogy, the transient thermal impedance Zth(t) can be transformed into an electrical equivalent RC network. The number of RC sections increases the model details, therefore a twelfth order model, for Zth(j-a), based on the Cauer and Foster networks, has been used in order to improve the accuracy of both models. Figure 31 and Figure 32 show the general Cauer and Foster RC equivalent circuit used for the thermal impedance model. Figure 31. Cauer RC equivalent circuit Figure 32. Foster RC equivalent circuit Temperatures inside the electrical RC network represent voltages, power flows represent currents, electrical resistances and capacitances represent thermal resistances and capacitances respectively. The case temperature is represented with a DC voltage source and it can be interpreted as the initial junction temperature. Transient thermal impedance models are derived by curve fitting an equation to the measured data. Values for the individual resistors and capacitors are the variables from that equation and are defined in Table 11, for both Zth(j-a) Cauer and Foster thermal impedance models. τ τ ⋅ τ − = Δ ∫ d ) ( P ) t ( Z ) t ( T t 0 th AM11819v1 C1 C2 C3 Cn R1 R2 R3 Rn AM11820v1 R1 R2 R3 Rn C1 C2 C3 Cn |
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