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AN4043 датащи(PDF) 45 Page - STMicroelectronics |
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AN4043 датащи(HTML) 45 Page - STMicroelectronics |
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45 / 60 page ![]() AN4043 Power losses and dissipation Doc ID 022726 Rev 2 45/60 and therefore, the conduction power losses of one device (IGBT and diode) are: Equation 25 Of course, the total conduction losses per inverter are six times this value. 4.2 Switching power losses The switching loss is the power consumption during the turn-on and turn-off transients. As already shown in Figure 26, it is given by the pulse of power dissipated during the turn-on (ton) and turn-off (toff). Experimentally, it can be calculated by the time integral of product of the collector current and collector-emitter voltage for the switching period. However, the dynamic performance is strictly related to many parameters such as voltage, current and temperature, so it is necessary to use the same assumptions of conduction power losses ( Section 4.1: Conduction power losses) to simplify the calculations. Under these conditions, the switching energy losses are given by: Equation 26 Equation 27 where Êon and Êoff are the maximum values taken at Tjmax and Îc, θ stands for ωt and φ is the phase angle between output voltage and current. Finally, the switching power losses per device depend on the switching frequency (fsw) and they are calculated as follows: Equation 28 where EIGBT and EDiode are the total switching energy for the IGBT and the freewheeling diode, respectively. Also in this case, the total switching losses per inverter are six times this value. Figure 28 shows the real turn-on and turn-off waveforms of the STGIPN3H60 under the following conditions: ● VPN = 300 V, IC = 0.5 A, Tj = 100 °C with inductive load on full bridge topology, taken on the low-side IGBT. The green plots represent instantaneous power as a result of IC (in red) and VCE (in yellow) waveforms multiplication, during the switching transitions. The areas under these plots are the switching energies computed by graphic integration thanks to the digital oscilloscope. cond_Diode cond_IGBT cond P P P + = ()φ = θ - θ cos Eˆ ) ( E on on ()φ = θ - θ cos Eˆ ) ( E off off ∫ φ + π φ + π π ⋅ + = θ ⋅ + π = 2 2 - sw Diode IGBT sw Diode IGBT sw f ) E E ( d f ) E E ( 2 1 P |
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