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AN4043 датащи(PDF) 46 Page - STMicroelectronics |
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AN4043 датащи(HTML) 46 Page - STMicroelectronics |
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46 / 60 page ![]() Power losses and dissipation AN4043 46/60 Doc ID 022726 Rev 2 4.3 Thermal impedance overview During operation, power losses generate heat which elevates the temperature in the semiconductor junctions contained in the SLLIMM-nano, limiting its performance and lifetime. To ensure safe and reliable operation, the junction temperature of power devices must be kept below the limits defined in the datasheet, therefore, the generated heat must be conducted away from the power chips and into the environment using an adequate cooling system. The SLLIMM-nano was designed to drive electric motors up to 100 W without any heatsink. Therefore, the thermal aspect of the system is one of the key factors in designing high efficiency and high reliability equipment. In this environment the package and its thermal resistance play a fundamental role. Thermal resistance quantifies the capability of a given thermal path to transfer heat in steady-state and it is generically given as the ratio between the temperature increase above the reference and the relevant power flow: Equation 29 The thermal resistance specified in the datasheet is the junction-ambient Rth(j-a) which is commonly used with natural and forced convection air cooled systems and it is defined as the difference in temperature between junction and ambient reference divided by the power dissipation per device: Equation 30 Figure 28. Typical switching waveforms of the STGIPN3H60 V CE E on=23.5μJ(*) IC t on = 270ns V LIN = 2V/Div I C = 500mA/Div V CE = 100V/Div t = 100ns/Div V LIN Turn on STGIPN3H60 Low side Tj=100 °C Turn off STGIPN3H60 Low side Tj=100 °C toff = 905ns (*) E on and Eoff are the areas under the red plots E = ∫ (V CE · IC) dt V CE E off=5.1μJ(*) I C V LIN V LIN = 2V/Div I C = 200mA/Div V CE = 100V/Div t = 200ns/Div AM11816v1 P T Rth Δ Δ = D amb j a) th(j- P T T R − = |
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