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AN3432 датащи(PDF) 3 Page - STMicroelectronics

номер детали AN3432
подробное описание детали  How to choose a bypass diode for a silicon panel junction box
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AN3432
Photocurrent production basics of silicon solar cells
Doc ID 019041 Rev 1
3/24
1
Photocurrent production basics of silicon solar cells
1.1
The photovoltaic effect
To generate a current through a semi conductor, some energy is required to extract the
electron from the valence band to the conduction band. This energy is greater than material
band gap energy (Egap).
Thus in case of silicon solar cell, if the photon energy (sunlight carrier) E = h
ν is higher than
the silicon band gap energy Egap =1.12eV, the electrons migrate through a PN junction.
Figure 1.
Current generation through a semiconductor
1.2
The solar cell model
Silicon solar cell creates a photocurrent called IL that is proportional to illumination and
independent of output cell voltage. However, when this voltage increases, a part of this
current is dissipated in p-n junction. This is why the equivalent model, shown in Figure 2,
consists in a current generator (photocurrent), a diode (intrinsic p-n junction), two
resistances Rp (parallel resistance: models the noise current between top and bottom of the
solar cell) and Rs (series resistance: simulates the materials and contact losses).
Conduction
band
é
Valence
band
E = h > E
ν
gap
E(eV)
E
V
E
c
E= E -E
gap
c
v
Forbidden
area



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